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Structure and luminescence of silicon irradiated by protons

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Inorganic Materials: Applied Research Aims and scope

Abstract

The temperature dependence of photoluminescence (PL) in the range 8–300 K is studied for single crystalline silicon irradiated by protons at high temperatures. It is shown that the samples with p-type conductivity display intense PL in contrast to the samples with n-type conductivity, which do not display photo-luminescence. Studies using high-resolution transmission electron microscopy (TEM) have shown that photoluminescence exists until crack formation and splitting of the irradiated layer. The rodlike defects {113} formed during irradiation transform into residual fragments of dislocation structures.

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References

  1. Kalinin, V.V., Aseyev, A.L., Gerasimenko, N.N., Obodnikov, V.I., and Stenin, S.I., The formation of defects in Si under the radiation enhanced diffusion conditions, Radiation Effects, 1980, vol. 48, pp. 13–18.

    Article  CAS  Google Scholar 

  2. Eaglesham, D.J., Stolk, P.A., Grossmann, H.-J., Haynes, T.E., and Poate, J.M., Implant damage and transient enhanced diffusion in Si, Nucl. Instr. Meth. Phys. Res. B, 1995, vol. 106, pp. 191–197.

    Article  CAS  Google Scholar 

  3. Pan, G.Z., Ostroumov, R.P., Ren, L.P., Lian, Y.G., and Wang, K.L., Silicon light emissions from boron implant-induced defect engineering, J. Non-Crystal. Solids, 2006, vol. 352, pp. 2506–2509.

    Article  CAS  Google Scholar 

  4. Gerasimenko, N.N., Dzhamanbalin, K.B., and Medetov, N.A., Samoorganizovannye nanorazmernye struktury na poverkhnosti i v ob”eme poluprovodnikov (Self-Organized Nano-Sized Structures on the Surface and in Volume of Semiconductors), Almaty: LEM, 2002.

    Google Scholar 

  5. Gerasimenko, N.N., Kozlovskii, V.V., and Mikhaylov, A.N., Radiation defects as nanocrystals in bulk crystalline silicon, Proc. 25th Int. Conf. on Defects in Semiconductors (ICDS-25), St. Petersburg, 2009.

    Google Scholar 

  6. Gerasimenko, N.N., Ionic synthesis of silicon nanostructures, Tezisy IV Vserossiiskoi konferentsii “Fizicheskie i fiziko-khimicheskie osnovy ionnoi implantatsii” (Proc. 4th All-Russ. Conf. “Physical and Physico-Chemical Foundations of Ionic Implantation), Novosibirsk, 2012.

    Google Scholar 

  7. David, M.-L., Oliviero, E., Ratchenkova, A., Gerasimenko, N.N., Declemy, A., Barton, J.-F., van Veen, A., and Beaufort, M.F., Defects created by helium implantation at different temperatures in silicon, Solid State Phenom., 2002, vol. 82–84, pp. 285–290.

    Article  Google Scholar 

  8. Arakawa, K., Saitoh, K., Mori, H., and Ono, R., Comparison among the formation processes of extended defects in Si under irradiation with low-energy H+, He+ ions and high energy electrons, Nucl. Instr. Meth. Phys. Res. B, 2003, vol. 206, pp. 76–80.

    Article  CAS  Google Scholar 

  9. Eaglesham, D.J., Stolk, P.A., Gossmann, H.J., and Poate, J.M., Implantation and transient B diffusion in Si: The source of the interstitials, Appl. Phys. Lett., 1994, vol. 65, pp. 2305–2307.

    Article  CAS  Google Scholar 

  10. Gerasimenko, N.N., Dvurechenskii, A.V., Romanov, S.I., and Smirnov, L.S., On effects of large doses of injected into semiconductor iones, Fiz. Tekhn. Poluprovod., 1973, vol. 7, pp. 2195–2199.

    CAS  Google Scholar 

  11. Gerasimenko, N.N. and Tynyshtykbaev, K.B., Formation of radiation defects in silicon contained hydrogen atoms, Fiz. Tekhn. Poluprovod., 1980, vol. 14, pp. 1673–1676.

    CAS  Google Scholar 

  12. Fizicheskie protsessy v obluchennykh poluprovodnikakh (Physical Processes in Irradiated Semiconductors), Smirnov, L.S, Ed., Novosibirsk: Nauka, 1977.

    Google Scholar 

  13. Vikhrev, B.I., Gerasimenko, N.N., Dvurechenskii, A.V., and Smirnov, L.S., Interaction of hydrogen atoms in silicon with defects, injected by ionic bombardment, Fiz. Tekhn. Poluprovod., 1974, vol. 8, pp. 1345–1348.

    CAS  Google Scholar 

  14. Korshunov, F.P., Larionova, T.P., Mudryi, A.V., et al., Luminescence of silicon films, irradiated by high energy particles, on sapphire, Trudy IV mezhdunarodnoi konferentsii “Vzaimodeistvie izluchenii s tverdym telom” (Proc. 4th Int. Conf. “Interaction of Radiation with Solid”), Minsk: Belor. Gos. Univ., 2001.

    Google Scholar 

  15. Gerasimenko, N.N., Rolle, M., Cheng, Li-Jen., Lee, Y.H., Corelli, J.C., and Corbett, J.W., Infrared absorption of silicon irradiated by protons, Phys. Stat. Sol. (B), 1978, vol. 90, pp. 689–695.

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. National Research University of Electronic Technology, Moscow, Russia

    N. N. Gerasimenko, O. A. Zaporozhan & D. I. Smirnov

  2. Lebedev Physical Institute, Russian Academy of Sciences, Moscow, Russia

    N. N. Gerasimenko & D. I. Smirnov

  3. Research Physical-Technical Institute (NIFTI), Nizhni Novgorod State University, Nizhni Novgorod, Russia

    A. N. Mikhailov

  4. St. Petersburg State Polytechnical University, St. Petersburg, Russia

    V. V. Kozlovskii

  5. Kostanai Physical-Technical University, Kostanai, Kazakhstan

    N. A. Medetov

  6. Nizhni Novgorod State University, Nizhni Novgorod, Russia

    D. A. Pavlov & A. I. Bobrov

Authors
  1. N. N. Gerasimenko
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  2. A. N. Mikhailov
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  3. V. V. Kozlovskii
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  4. O. A. Zaporozhan
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  5. N. A. Medetov
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  6. D. I. Smirnov
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  7. D. A. Pavlov
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  8. A. I. Bobrov
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Corresponding author

Correspondence to N. N. Gerasimenko.

Additional information

Original Russian Text © N.N. Gerasimenko, A.N. Mikhailov, V.V. Kozlovskii, O.A. Zaporozhan, N.A. Medetov, D.I. Smirnov, D.A. Pavlov, A.I. Bobrov, 2013, published in Perspektivnye Materialy, 2013, No. 8, pp. 18–23.

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Gerasimenko, N.N., Mikhailov, A.N., Kozlovskii, V.V. et al. Structure and luminescence of silicon irradiated by protons. Inorg. Mater. Appl. Res. 5, 133–137 (2014). https://doi.org/10.1134/S2075113314020063

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  • DOI: https://doi.org/10.1134/S2075113314020063

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