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An IR-spectroscopy study of the radiation-chemical transformation of n-hexane on the silicon surface

  • Physicochemical Processes at the Interfaces
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Abstract

The radiation-chemical decomposition of n-hexane in the Si-n-hexane system under the action of γ radiation at room temperature has been studied by reflection-absorption IR spectroscopy. It has been shown that the adsorption of n-hexane on the silicon surface occurs by the molecular and dissociative mechanisms. It has been found that the radiolysis of n-hexane at absorbed dose D γ of 5–50 kGy is accompanied by the formation of surface intermediate active decomposition products: silicon alkyls, π complexes of olefins, and silicon hydrides. The kinetics of accumulation of the final decomposition product—molecular hydrogen-has been analyzed to determine its radiation-chemical yield of G ads(H2) = 36.4 molecules/100 eV. A possible mechanism of this process has been discussed.

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Authors and Affiliations

  1. Institute of Radiation Problems, Azerbaijan National Academy of Sciences, ul. Vagabzade 9, Baku, AZ1141, Azerbaijan

    N. N. Gadzhieva

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  1. N. N. Gadzhieva
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Correspondence to N. N. Gadzhieva.

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Original Russian Text © N.N. Gadzhieva, 2014, published in Fizikokhimiya Poverkhnosti i Zashchita Materialov, 2014, Vol. 50, No. 4, pp. 368–373.

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Gadzhieva, N.N. An IR-spectroscopy study of the radiation-chemical transformation of n-hexane on the silicon surface. Prot Met Phys Chem Surf 50, 460–465 (2014). https://doi.org/10.1134/S2070205114040030

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  • DOI: https://doi.org/10.1134/S2070205114040030

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