Thermoelectric materials in the form of nanostructures
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It is found that if thermoelectric material has a structure in the form of alternating regions with low and high thermal conductivity and electrical conductivity, and thus the width of the regions with low thermal conductivity and electrical conductivity does not exceed the mean free path of electrons in them, then the thermoelectric figure of merit of such a material may be Z > 4.
KeywordsThermoelectric Property Thermoelectric Material Heat Transfer Coefficient Semiconductor Layer Semiconductor Film
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- 3.V. L. Bonch-Bruevich and S. G. Kalashnikov, Semiconductor Physics (Nauka, Moscow, 1990) [in Russian].Google Scholar