Nanotechnologies in Russia

, Volume 9, Issue 7–8, pp 363–368 | Cite as

Thin partially reduced oxide-graphene films: structural, optical, and electrical properties

  • G. N. Alexandrov
  • S. A. SmagulovaEmail author
  • A. N. Kapitonov
  • F. D. Vasil’eva
  • I. I. Kurkina
  • P. V. Vinokurov
  • V. B. Timofeev
  • I. V. Antonova


High-resistive (1012 Ohm/□) oxide-graphene films with thickness varying from 5 nm to several micrometers were produced and studied. Films of 5–150 nm on glass had a transparency of 93–98% for wave-lengths of 400–700 nm, while the transparency of a suspended film with an area of 2–3 cm2 and thickness of 200–400 nm amounted to 82–90%. The durable reduction of such films in hydrazine vapor results in a resistance decrease to 104 Ohm/□. A new approach is proposed which allows us to reduce in hydrazine vapor only the upper layers of an oxide-graphene film and form thin-film structures comprising conducting and insulating layers. The films are promising for a wide spectrum of optical and electronic applications, including flexible electronics.


Graphene Oxide Anodize Aluminum Oxide Reduce Graphene Oxide Graphene Film Graphene Paper 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Pleiades Publishing, Ltd. 2014

Authors and Affiliations

  • G. N. Alexandrov
    • 1
  • S. A. Smagulova
    • 1
    Email author
  • A. N. Kapitonov
    • 1
  • F. D. Vasil’eva
    • 1
  • I. I. Kurkina
    • 1
  • P. V. Vinokurov
    • 1
  • V. B. Timofeev
    • 1
  • I. V. Antonova
    • 2
  1. 1.Ammosov North-Eastern Federal UniversityYakutskRussia
  2. 2.Rzhanov Institute of Semiconductor Physics, Siberian BranchRussian Academy of SciencesNovosibirskRussia

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