The methods of manufacturing and properties of elements of the SOI MOS nanotransistor such as the gate/gate dielectric, source/drain regions and ohmic contacts have been considered. The HfO2(50 nm)/Si (100) and W/HfO2(4 nm)/Si (100) gate structures have been fabricated using the radio-frequency magnetron sputtering method. It is shown that the crystalline structure of the HfO2 films and their electrical characteristics (breakdown voltage) are interrelated. To produce ultrashallow source/drain regions, a high-dose plasma-immersion boron ion implantation is used. In the process of the rapid thermal annealing of the implanted layers, a substantial reduction in the boron amount near the surface of the SOI structure is detected. The CoSi2 ohmic contacts were made using the Ti(8 nm)/Co(10 nm)/Ti(5 nm) structures formed on a Si substrate of (100) orientation. It is established that the CoSi2 film formed as a result of two-stage annealing possesses a surface resistance of ∼20 Ohm/□.
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Original Russian Text © V.I. Rudakov, E.A. Bogoyavlenskaya, Yu.I. Denisenko, V.V. Ovcharov, A.L. Kurenya, K.V. Rudenko, V.F. Lukichev, A.A. Orlikovsky, N.I. Plis, 2013, published in Rossiiskie Nanotekhnologii, 2013, Vol. 8, Nos. 3–4.
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Rudakov, V.I., Bogoyavlenskaya, E.A., Denisenko, Y.I. et al. Formation and properties of ultrathin layers for fabrication of SOI MOS nanotransistor elements. Nanotechnol Russia 8, 255–261 (2013). https://doi.org/10.1134/S1995078013020122
- Rapid Thermal Annealing
- Ultrathin Layer
- Transient Layer
- Auger Electron Spectroscopy Analysis
- Rapid Thermal Annealing Process