Formation and properties of ultrathin layers for fabrication of SOI MOS nanotransistor elements
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The methods of manufacturing and properties of elements of the SOI MOS nanotransistor such as the gate/gate dielectric, source/drain regions and ohmic contacts have been considered. The HfO2(50 nm)/Si (100) and W/HfO2(4 nm)/Si (100) gate structures have been fabricated using the radio-frequency magnetron sputtering method. It is shown that the crystalline structure of the HfO2 films and their electrical characteristics (breakdown voltage) are interrelated. To produce ultrashallow source/drain regions, a high-dose plasma-immersion boron ion implantation is used. In the process of the rapid thermal annealing of the implanted layers, a substantial reduction in the boron amount near the surface of the SOI structure is detected. The CoSi2 ohmic contacts were made using the Ti(8 nm)/Co(10 nm)/Ti(5 nm) structures formed on a Si substrate of (100) orientation. It is established that the CoSi2 film formed as a result of two-stage annealing possesses a surface resistance of ∼20 Ohm/□.
KeywordsRapid Thermal Annealing Ultrathin Layer Transient Layer Auger Electron Spectroscopy Analysis Rapid Thermal Annealing Process
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