Abstract
A technique for determining Young’s modulus of oriented nanowhiskers using atomic force microscopy is developed. Results of studying the effect of geometric parameters on Young’s modulus of oriented gallium arsenide nanowhiskers are presented. Young’s modulus value has been found experimentally for the GaAs nanowhiskers, which varied from 9 to 143 GPa depending on their aspect ratio. It is shown that Young’s modulus of the GaAs nanowhiskers depends on their aspect ratio and can exceed Young’s modulus of the bulk GaAs. The results can be used in the development of technological processes for forming structures of the nano- and microsystem hardware and the nano- and microelectronics based on oriented nanowhiskers, in particular arsenide gallium nanowhiskers, as well as in the development of techniques for the nanodiagnostics of filamentary structures.
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Original Russian Text © O.A. Ageev, B.G. Konoplev, M.V. Rubashkina, A.V. Rukomoikin, V.A. Smirnov, M.S. Solodovnik, 2013, published in Rossiiskie Nanotekhnologii, 2013, Vol. 8, Nos. 1–2.
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Ageev, O.A., Konoplev, B.G., Rubashkina, M.V. et al. Studying the effect of geometric parameters of oriented GaAs nanowhiskers on Young’s modulus using atomic force microscopy. Nanotechnol Russia 8, 23–28 (2013). https://doi.org/10.1134/S1995078013010023
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DOI: https://doi.org/10.1134/S1995078013010023