Abstract
A new technique for manufacturing silicon nanowires on the surface of a conventional silicon wafer using ion-beam irradiation through a lithographic mask has been proposed. The conditions needed for synthesizing silicon oxide using the irradiation of the silicon substrate by protons with an energy of about 1 keV have been studied. The possibility of synthesizing silicon oxide in the region of the geometric shadow under the monocrystalline silicon nanowire has been demonstrated.
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Original Russian Text © B.A. Gurovich, K.E. Prikhod’ko, A.N. Taldenkov, A.Yu. Yakubovskii, K.I. Maslakov, D.A. Komarov, L.V. Kutuzov, G.E. Fedorov, 2012, published in Rossiiskie Nanotekhnologii, 2012, Vol. 7, Nos. 1–2.
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Gurovich, B.A., Prikhod’ko, K.E., Taldenkov, A.N. et al. Development of ion-beam technique for manufacturing silicon nanowires. Nanotechnol Russia 7, 93–97 (2012). https://doi.org/10.1134/S1995078012010090
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DOI: https://doi.org/10.1134/S1995078012010090