The results of designing, fabricating, and testing experimental samples of memory matrices whose memory element is based on self-formed conducting nanostructures created in electroformed open “sandwich” structures Si- SiO2-W are given. A possible practical usage of such memory is shown. The unique combination of its consumer properties, e.g., high operating speed, thermal stability, radiation resistance, and potentially high-density data recording, is demonstrated. The possibility of manufacturing the memory matrices by standard silicon technology is shown as well.
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V. M. Mordvintsev, S. E. Kudryavtsev, and V. L. Levin, “Electroforming as a Self-Organization Process of Conducting Nanostructures for Elements of Energy-Independent Electrically Reprogrammable Memory,” submitted to Ross. Nanotekhnol. [Nanotech. Russ.]
V. M. Mordvintsev, and S. E. Kudryavtsev, “Electroforming of Si-SiO2-W Structures with an Exposed Nanometer-Thick SiO2 Layer,” Mikroelektronika 30(5), 353–363 (2001) [Russ. Microelectron. 30 (5), 303–311 (2001)].
V. M. Mordvintsev, S. E. Kudryavtsev, and V. L. Levin, “Memory Matrix Cell,” RF Patent No. 2 263 373 (2005).
V. M. Mordvintsev and S. E. Kudryavtsev, “Energy-Independent Memory Matrix Cell,” RF Patent No. 2 302 058 (2007).
V. M. Mordvintsev and S. E. Kudryavtsev, “Highly Doped Si-SiO2-W Sandwich Structures with an Exposed Insulator Edge: Electrical Transport and Electroforming,” Mikroelektronika 36(6), 1–14 (2007) [Russ. Microelectron. 36 (6), 371–383 (2007)].
V. M. Mordvintsev and T. K. Shumilova, “In Situ Control of Etching a Nanometer Dielectric Layer by Measuring the System Admittance,” Mikroelektronika 28(2), 122–133 (1999) [Russ. Microelectron. 28 (2), 114–123 (1999)].
V. M. Mordvintsev, S. E. Kudryavtsev, and V. L. Levin, “The Qualitative Difference between Mechanisms of Electroforming in Si-SiO2-W Structures Based on n-Si and p-Si,” Fiz. Tekh. Poluprovodn. (St. Petersburg) 39(2), 222–229 (2005) [Semiconductors 39 (2), 206–213 (2005)].
H. Pagnia and N. Sotnik, “Bistable Switching in Electroformed Metal-Insulator-Metal Devices,” Phys. Status Solidi A 108, 11–65 (1988).
Original Russian Text © V.M. Mordvintsev, S.E. Kudryavtsev, V.L. Levin, 2009, published in Rossiiskie nanotekhnologii, 2009, Vol. 4, Nos. 1–2.
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Mordvintsev, V.M., Kudryavtsev, S.E. & Levin, V.L. High-stable nonvolatile electrically reprogrammable memory on self-formed conducting nanostructures. Nanotechnol Russia 4, 129–136 (2009). https://doi.org/10.1134/S1995078009010145
- Memory Cell
- Conducting Medium
- Matrix Cell
- Memory Element
- Switching Cycle