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High-stable nonvolatile electrically reprogrammable memory on self-formed conducting nanostructures

Abstract

The results of designing, fabricating, and testing experimental samples of memory matrices whose memory element is based on self-formed conducting nanostructures created in electroformed open “sandwich” structures Si- SiO2-W are given. A possible practical usage of such memory is shown. The unique combination of its consumer properties, e.g., high operating speed, thermal stability, radiation resistance, and potentially high-density data recording, is demonstrated. The possibility of manufacturing the memory matrices by standard silicon technology is shown as well.

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Correspondence to V. M. Mordvintsev.

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Original Russian Text © V.M. Mordvintsev, S.E. Kudryavtsev, V.L. Levin, 2009, published in Rossiiskie nanotekhnologii, 2009, Vol. 4, Nos. 1–2.

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Mordvintsev, V.M., Kudryavtsev, S.E. & Levin, V.L. High-stable nonvolatile electrically reprogrammable memory on self-formed conducting nanostructures. Nanotechnol Russia 4, 129–136 (2009). https://doi.org/10.1134/S1995078009010145

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Keywords

  • Memory Cell
  • Conducting Medium
  • Matrix Cell
  • Memory Element
  • Switching Cycle