Abstract
Plasma technology is used in various fields such as ozone generation, surface treatment, medicine and so on. Wave generated plasmas such as microwave plasma, is a promising technology for its interesting and versatile features. These features of microwave plasma are an alternative technology compared to traditional thermal chemical reactors provided certain technical challenges are overcome. In this numerical study, the properties of microwave-powered plasma operated at frequency of 2.45 GHz and in argon gas at atmospheric pressure were investigated. By varying the input power of the device in transvers magnetic (TM) mode, the comparative profiles of the electron density, the electron temperature, the electric field and the power deposition are demonstrated. Simulation results show chemical generation in microwave plasma. High energy electrons and electron density have been considered to be the main factors affecting microwave plasma properties.
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Poorreza, E., Dadashzadeh Gargari, N. Modeling and Simulation of a Microwave-Assisted Plasma with Different Input Power for Plasma-Based Applications. Russ. J. Phys. Chem. B 17, 719–724 (2023). https://doi.org/10.1134/S1990793123030235
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DOI: https://doi.org/10.1134/S1990793123030235