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Features of the electrical and photoelectrical properties of nanocrystalline indium and zinc oxide films

Abstract

Electrical and photoelectrical properties of nanocrystalline zinc oxide and indium oxide films are studied. For these oxides the temperature dependences of conductance are observed to be consisting of two parts with different activation energy. Also photoconductivity relaxation of the oxides can be described by a sum of two exponential functions. The spectral dependencies of nanocrystalline zinc oxide and indium oxide photoconductivity are presented. The photoconductivity arises as samples are illuminated with energy less than band gap. The data are discussed on the basis of model by which the localized states in the band gap play major role.

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Correspondence to A. S. Il’in.

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Original Russian Text © T.V. Belysheva, M.I. Ikim, A.S. Il’in, P.K. Kashkarov, M.N. Martyshov, Y. Paltiel, L.I. Trakhtenberg, N.P. Fantina, P.A. Forsh, 2016, published in Khimicheskaya Fizika, 2016, Vol. 35, No. 10, pp. 42–48.

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Belysheva, T.V., Ikim, M.I., Il’in, A.S. et al. Features of the electrical and photoelectrical properties of nanocrystalline indium and zinc oxide films. Russ. J. Phys. Chem. B 10, 810–815 (2016). https://doi.org/10.1134/S1990793116050171

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  • DOI: https://doi.org/10.1134/S1990793116050171

Keywords

  • metal oxides
  • temperature dependence of the conductivity
  • photoconductivity
  • localized levels