Abstract
A concept and model of a combined 4-stage scaling of semiconductor power converter chips with nanosized heterojunctions to provide maximum power is proposed. A variant of optimizing the scaling solution for a modular structure is implemented by heterojunctions with sequence variations \(Au(Al) - (P(N) - 3C - SiC{\text{/}}p(n) - Si) - (n(p) - aGe) - Al(Au)\) with an increase in the concentration and direction of movement of nonequilibrium carriers and further upconversion of the voltage with charge pumping.
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A.V. Gurskaya expresses gratitude to the Ministry of Science and Higher Education for a presidential scholarship.
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Gurskaya, V., Dolgopolov, M.V., Elisov, M.V. et al. Combined Scaling of Nanochip Generators for Betavoltaics. Phys. Part. Nuclei Lett. 20, 1088–1093 (2023). https://doi.org/10.1134/S1547477123050333
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DOI: https://doi.org/10.1134/S1547477123050333