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Study of chemical bonds and element composition of silicon oxycarbonitride films by the methods of XP-, IR-, and energy-dispersive spectroscopy

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Abstract

The element composition and chemical bonds of nanocomposite films of hydrogenated silicon oxycarbonitride fabricated through high-frequency plasma-chemical deposition from initial gas mixtures of 1,1,3,3-tetramethyldisilazane with nitrogen and oxygen in the temperature range 373–973 K depending on the synthesis conditions is studied. The effect of changes in the temperature and chemical composition of the initial gas mixtures on the element composition and types of chemical bonds in SiC x N y O z :H films is investigated.

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References

  1. Fu, Y., Sun, C.Q., Du, H., and Yan, B., From diamond to crystalline silicon carbonitride: Effect of introduction of nitrogen in CH4/H2 gas mixture using MW-PECVD, Surf. Coat. Technol., 2002, vol. 160, pp. 165–172.

    Article  Google Scholar 

  2. Bill, J., Seitz, J., Thurn, G., Durr, J., Canel, J., Janos, B.Z., Jalomecki, A., Santez, D., Schempp, S., Lamparter, H.P., Mayer, J., and Aldinger, F., Structure analysis and properties of Si–C–N ceramics derived from polysilazanes, Phys. Status Solidi A, 1998, vol. 166, pp. 269–296.

    Article  Google Scholar 

  3. Gómez, F.J., Prieto, P., Elizalde, E., and Piquerasa, J., SiCN alloys deposited by electron cyclotron resonance plasma chemical vapor deposition, Appl. Phys. Lett., 1996, vol. 69, pp. 773–775.

    Article  Google Scholar 

  4. Soto, G., Samano, E.C., Machorro, R., and Cota, L., Growth of SiC and SiCxNy films by pulsed laser ablation of SiC in Ar and N2 environments, J. Vac. Sci. Technol. A, 1998, vol. 16, pp. 1311–1315.

    Article  Google Scholar 

  5. Xie, E., Ma, Z., Lin, H., and He, D., Preparation and characterization of SiCN films, Opt. Mater., 2003, vol. 23, pp. 151–156.

    Article  Google Scholar 

  6. Chen, C.W., Huang, C.C., Lin, Y.Y., Chen, L.C., Chen, K.H., and Su, W.F., Optical properties and photoconductivity of amorphous silicon carbon nitride thin film and its application for UV detection, Diamond Relat. Mater., 2005, vol. 14, pp. 1010–1013.

    Article  Google Scholar 

  7. Fainer, N.I., Kosinova, M.L., Rumyantsev, Yu.M., and Kuznetsov, F.A., RPECVD thin silicon carbonitride films using hexamethyldisilazane, J. Phys. IV, 1999, vol. 9, pp. Pr8-769–Pr8-775.

    Google Scholar 

  8. Fainer, N.I., Golubenko, A.N., Rumyantsev, Yu.M., and Maximovskii, E.A., Use of hexamethylcyclotrisilazane for preparation of transparent films of complex compositions, Glass Phys. Chem., 2009, vol. 35, no. 3, pp. 274–283.

    Article  Google Scholar 

  9. Fainer, N.I., Rumyantsev, Yu.M., Golubenko, A.N., Kosinova, M.L., and Kuznetsov, F.A., Synthesis of nanocrystalline silicon carbonitride films by remote plasma enhanced chemical vapor deposition using the mixture of hexamethyldisilazane with helium and ammonia, J. Cryst. Growth, 2003, vol. 248, pp. 175–179.

    Article  Google Scholar 

  10. Fainer, N.I., From organosilicon precursors to multifunctional silicon carbonitride, Russ. J. Gen. Chem., 2012, vol. 82, no. 1, pp. 43–52.

    Article  Google Scholar 

  11. Rebib, F., Tomasella, E., Beche, E., Cellier, J., and Jacquet, M., FTIR and XPS investigations of a-SiOxNy thin films structure, J. Phys.: Conf. Ser., 2008, vol. 100, pp. 082034–082038.

    Google Scholar 

  12. Davazoglou, D., Optical absorption threshold of low pressure chemically vapor deposited silicon oxynitride films from SiCl2H2–NH3–N2O mixtures, Thin Solid Films, 2003, vol. 437, pp. 266–271.

    Article  Google Scholar 

  13. Pandey, R.K., Patil, L.S., Bange, J.P., Patil, D.R., Mahajan, A.M., Patil, D.S., and Gautam, D.K., Growth and characterization of SiON thin films by using thermal-CVD machine, Opt. Mater., 2004, vol. 25, pp. 1–7.

    Article  Google Scholar 

  14. Bae, Y.W., Gallois, B., Wilkens, B.J., and Olsen, J.E., Deposition and chemical composition of silicon oxynitride from methylsilazane in ammonia and nitrous oxide, J. Electrochem. Soc., 1998, vol. 145, pp. 1902–1906.

    Article  Google Scholar 

  15. Fainer, N.I., Plekhanov, A.G., Golubenko, A.N., Rumyantsev, Yu.M., Maksimovskii, E.A., and Shayapov, V.R., Structure and elemental composition of transparent nanocomposite silicon oxycarbonitride films, J. Struct. Chem., 2017, vol. 58, no. 1, pp. 119–125.

    Article  Google Scholar 

  16. Fainer, N.I., Kosinova, M.L., Rumyantsev, Yu.M., Maksimovskii, E.A, Kuznetsov, F.A., Kesler, V.G., Kirienko, V.V., Han, B.-Sh., and Lu, Ch., Synthesis and physicochemical properties of nanocrystalline silicon carbonitride films deposited by microwave plasma from organoelement compounds, Glass Phys. Chem., 2005, vol. 31, no. 4, pp. 427–432.

    Article  Google Scholar 

  17. Fainer, N.I., Kosinova, M.L., Rumyantsev, Yu.M., Maximovski, E.A., Ayupov, B.M., Kolesov, B.A., Kuznetsov, F.A., Kesler, V.G., Terauchi, M., Shibata, K., Satoh, F., and Cao, Z.X., Nanocrystalline films of silicon carbonitride: Chemical composition and bonding and functional properties, in Proceedings of the 15th European Conference on Chemical Vapor Deposition EUROCVD-15, 2005, vol. 2005-09, pp. 1074–1081.

    Google Scholar 

  18. Marton, D., Boyd, K.J., Al-Bayati, A.H., Todorov, S.S., and Rabalais, J.W., Carbon nitride deposited using energetic species: A two-phase system, Phys. Rev. Lett., 1994, vol. 73, pp. 118–121.

    Article  Google Scholar 

  19. Chen, L.C., Chen, K.H., Bhusari, D.M., Yang, C.Y., Lin, M.C., Huang, Y.F., and Chuang, T.J., Si-containing crystalline carbon nitride derived from microwave plasma-enhanced chemical vapor deposition, Thin Solid Films, 1997, vol. 303, pp. 66–75.

    Article  Google Scholar 

  20. Mundo, R.D., d’Agostino, R., Fracassii, F., and Palumbo, F., A novel organosilicon source for low temperature plasma deposition of silicon nitride-like thin films, Plasma Process. Polym., 2005, vol. 2, pp. 612–617.

    Article  Google Scholar 

  21. Anderson, D.R., in Analysis of Silicones, Smith, A.L., Ed., New York: Wiley Interscience, 1974, chap. 10, pp. 264–286.

    Google Scholar 

  22. Gao, P., Xu, J., Piao, Y., Ding, W., Wang, D., Deng, X., and Dong, C., Deposition of silicon carbon nitride thin films by microwave ECR plasma enhanced unbalance magnetron sputtering, Surf. Coat. Technol., 2007, vol. 201, pp. 5298–5301.

    Article  Google Scholar 

  23. Chang, S.-Y., Chang, J.-Y., Lin, S.-J., Tsai, H.-C., and Chang, Y.-S., Interface chemistry and adhesion strength between porous SiOCH low-k film and SiCN layers, J. Electrochem. Soc., 2008, vol. 155, pp. G39–G43.

    Article  Google Scholar 

  24. Huran, J., Valovic, A., Kucera, M., Kleinova, A., Kovacova, E., Bohacek, P., and Sekacova, M., Hydrogenated amorphous silicon carbon nitride films prepared by PECVD technology: Properties, J. Electr. Eng., 2012, vol. 63, pp. 333–335.

    Google Scholar 

  25. Grill, A. and Neumayer, D.A., Structure of low dielectric constant to extreme low dielectric constant SiCOH films: Fourier transform infrared spectroscopy characterization, J. Appl. Phys., 2003, vol. 94, pp. 6697–6707.

    Article  Google Scholar 

  26. Rumyantsev, Yu.M., Fainer, N.I., Maksimovskii, E.A., and Ayupov, B.M., Elemental composition analysis of silicon carbonitride thin films by energy dispersive spectroscopy, J. Struct. Chem., 2015, vol. 85, no. 12, pp. S182–S187.

    Google Scholar 

  27. Plekhanov, A.G., Fainer, N.I., Rumyantsev, Yu.M., Yushina, I.V., and Rakhmanova, M.I., The phase composition and physicochemical properties of transparent nanocomposite films of silicon oxycarbonitride, J. Struct. Chem., 2016, vol. 57, no. 6, pp. 1209–1215.

    Article  Google Scholar 

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Correspondence to N. I. Fainer.

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Original Russian Text © N.I. Fainer, A.G. Plekhanov, I.P. Asanov, 2017, published in Fizika i Khimiya Stekla.

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Fainer, N.I., Plekhanov, A.G. & Asanov, I.P. Study of chemical bonds and element composition of silicon oxycarbonitride films by the methods of XP-, IR-, and energy-dispersive spectroscopy. Glass Phys Chem 43, 410–416 (2017). https://doi.org/10.1134/S1087659617050042

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  • DOI: https://doi.org/10.1134/S1087659617050042

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