Abstract
Nanocrystalline lead selenide films of controlled thickness have been prepared by vacuum deposition on glass substrates of the C-29 brand. Some of the films are oxidized to various degrees in dry oxygen atmosphere. Film surfaces and cleavages have been investigated using scanning electron microscopy. Elemental compositions of subsurface film regions have been determined using X-ray microanalysis. Spectral dependences of film reflection in the wavelength range 2–16 μm have been investigated. The spectra are characterized by the presence of minima due to plasma oscillations of free charge carriers. A relation is established between the type and concentration of charge carriers, on the one hand, and the shape and position of the region of the anomalous dispersion of the reflectivity, on the other hand. Characteristic vibrations of the selenite ion SeO 2−3 , being assigned to fully symmetric and antisymmetric stretching vibrations, are found in the long-wavelength part of reflection spectra for all oxidized films.
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Original Russian Text © M.F. Panov, V.V. Tomaev, 2012, published in Fizika i Khimiya Stekla.
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Panov, M.F., Tomaev, V.V. Optical reflection of oxidized PbSe films in the infrared spectral range. Glass Phys Chem 38, 419–426 (2012). https://doi.org/10.1134/S1087659612040104
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DOI: https://doi.org/10.1134/S1087659612040104