Abstract
The physicochemical features of the interaction between nanofilms of iron triad metals and the gallium arsenide surface during thermal oxidation are analyzed. The role of oxides formed upon oxidation of iron, cobalt, and nickel metal films in the course of thermal oxidation of gallium arsenide is demonstrated, and the influence of the metal deposition method on the kinetics of oxidation, the composition, and the properties of the prepared samples is determined. Schemes are proposed for the development of the oxidation processes under investigation with due regard for the chemical specific features of the iron triad metals and their compounds.
Similar content being viewed by others
References
Yu, K.M., Walukiewicz, W., Jaklevic, J.M., Haller, E.E., and Sands, T., Effects of Interface Reactions on Electrical Characteristics of Metal-GaAs Contacts, Appl. Phys. Lett., 1987, vol. 51, no. 3, pp. 189–191.
Lepine, B., Lallaizon, C., Schieffer, P., Guivarc’h, A., Jezequel, G., Rocher, A., Abel, F., Cohen, C., Deputier, S., and Nguyen Van Dau, F., Fe3GaAs/GaAs(001): A Stable and Magnetic Metal-Semiconductor Heterostructure, Thin Solid Films, 2004, vol. 446, pp. 6–11.
Deputier, S., Barrier, N., Guerin, R., and Guivarc’h, A., The Ternary Compound Fe3Ga2 − x Asx: A Promising Candidate for Epitaxial and Thermodynamically Stable Contacts on GaAs, J. Alloys Compd., 2002, vols. 262–263, pp. 416–422.
Takahashi, N., Zhang, T., Spangenberg, M., Greig, D., Shen, T.-H., Cornelius, S., Seddon, E.A., and Matthew, J.A.D., Spin-Resolved Photoelectron Spectroscopy of Ultrathin Fe Films on GaAs(001), Surf. Rev. Lett., 2002, vol. 9, no. 2, pp. 693–698.
Zhang, X.X. and Zhang, Z., Growth and Magnetism of Ni Films on GaAs(001), J. Magn. Magn. Mater., 2002, vol. 240, pp. 404–406.
Nuhoglu, C., Ayyildiz, E., Saglam, M., and Turut, A., Thermal Treatment of the MIS and Intimate Ni/n-LEC GaAs Schottky Barrier Diodes, Appl. Surf. Sci., 1998, vol. 135, pp. 350–356.
Herfort, J., Braun, W., Trampert, A., Schonherr, H.-P., and Ploog, K.H., Atomically Engineered Interfaces for Spin Injection: Ultrathin Epitaxial Fe Films Grown on As- and Ga-Terminated GaAs(001) Substrates, Appl. Surf. Sci., 2004, vol. 237, pp. 181–188.
Ababou, S., Lepine, B., Pingel, R., Godefroy, A., Quemerais, A., Guivarch, A., and Jezequel, G., Growth of Cobalt on GaAs(001) Studied by Photoemission and Photoelectron Diffraction, Surf. Rev. Lett., 1998, vol. 5, no. 1, pp. 285–288.
Kim, T.W. and Yoon, Y.S., Microstructural and Atomic Arrangement Studies in Fe(110)/GaAs(110) Heterostructures, J. Phys. Chem. Solids, 2000, vol. 61, pp. 847–851.
Wu, Y.Z., Ding, H.F., Jing, C., Wu, D., Dong, G.S., Jin, X.F., Sun, K., and Zhu, S., Epitaxy and Magnetism of Co on GaAs(001), J. Magn. Magn. Mater., 1999, vols. 198–199, pp. 297–299.
Monteverde, F., Michel, A., Guerin, Ph., and Eymery, J.-P., Epitaxial Growth of Fe on GaAs by Ion Beam Sputtering, Surf. Sci., 2001, vols. 482–485, pp. 872–877.
Rahmoune, M., Eymery, J.P., and Denanot, M.F., Analysis of Interfacial Reactions of Fe Films on Monocrystalline GaAs, J. Magn. Magn. Mater., 1997, vol. 175, pp. 219–227.
Thurmond, C.D., Schwartz, G.P., Kammlott, G.W., and Schwartz, B., GaAs Oxidation and the Ga-As-O Equilibrium Phase Diagram, J. Electrochem. Soc., 1980, vol. 127, no. 6, pp. 1366–1371.
Schwarz, G.P., Gualtieri, G.J., Griffiths, J.E., Thurmond, C.D., and Schwartz, B., Oxide-Substrate and Oxide-Oxide Chemical Reactions in Thermally Annealed Anodic Films on GaSb, GaAs, and GaP, J. Electrochem. Soc., 1980, vol. 127, no. 11, pp. 2488–2499.
Schmuki, P., Hussey, R.J., Sproule, G.I., Tao, Y., Wasilewski, Z.R., McCarey, J.P., and Graham, M.J., Nature and Growth of Anodic and Thermal Oxides on GaAs and AlxGa1 − x As, Corros. Sci., 1999, vol. 41, pp. 1467–1474.
Mittova, I.Ya., Sviridova, V.V., and Tikhomirova, E.V., Kinetics of Thermal Oxidation of SAGOCh-1(111) GaAs in Oxygen, in Fizikokhimiya materialov i protsessov v mikroelektronike (Physical Chemistry of Materials and Processes in Microelectronics), Voronezh: Voronezh State University, 1989, pp. 166–170 [in Russian].
Mittova, I.Ya. and Ponomareva, N.I., Thermal Oxidation of GaAs in Oxygen, in Fizikokhimiya geterogennykh sistem. Sbornik nauchnykh trudov (Physical Chemistry of Heterogeneous Systems: Collection of Scientific Articles), Voronezh: Voronezh State University, 1988, pp. 27–31 [in Russian].
Breza, Yu.A., Venger, E.F., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Statov, V.A., and Tyurik, Yu.A., Physicochemical Features of Formation of Metal-A 3 B 5 Compound Interfaces and the Possibility of Predicting Interfacial Interactions, Poverkhnost, 1998, no. 5, pp. 110–127.
Venger, E.F., Konakova, R.V., Korotchenkov, G.S., Milenin, P.V., Russu, E.V., Prokopenko, I.V., Mezhfaznye vzaimodeistviya i mekhanizmy degradatsii v strukturakh metall-InP i metall-GaAs (Interfacial Interactions and Mechanisms of Degradation of Metal-InP and Metal-GaAs Structures), Konakova, R.V., Ed., Kiev: KTNK, 1999 [in Russian].
Testova, N.A., Golubenko, A.N., Kokovin, G.A., and Sysoev, S.V., Prediction of the Phase Composition of Transition Layers Formed at the Gallium Arsenide-Nickel Interface, Neorg. Mater., 1986, vol. 22, no. 11, pp. 1781–1785.
Handbook of Thin Film Technology, Maissel, L. and Glang, R., Eds., New York: McGraw-Hill, 1970. Translated under the title Tekhnologiya tonkikh plenok (spravochnik), Moscow: Sovetskoe Radio, 1977, vol. 1.
Danilin, B.S. and Syrchin, V.K., Magnetronnye raspylitel’nye sistemy (Magnetron Sputtering Systems), Moscow: Radio i Svyaz’, 1982 [in Russian].
Mattox, D.M., Particle Bombardment Effect on Thin-Film Deposition: A Review, J. Vac. Sci. Technol., A, 1989, vol. 7(3), pp. 1105–1114.
Ramana Murty M.V., Sputtering: the Material Erosion Tool, Surf. Sci., 2002, vol. 500, pp. 523–544.
Rozhanskii, N.V. and Akimov, A.G., Investigation into the Interaction of Pd Thin Films with GaAs Single Crystal during Annealing in Electron Microscope, Poverkhnost, 1990, no. 12, pp. 57–68.
Prinz, G.A., Stabilization of bcc-Co Via Epitaxial Growth on GaAs, Phys. Rev. Lett., 1985, vol. 54, no. 10, pp. 1051–1054.
Jin, X.F., Interfaces between Magnetic Thin Films and GaAs Substrate, J. Electron Spectrosc. Relat. Phenom., 2001, vols. 114–116, pp. 771–776.
Rahmoune, M., Eymery, J.P., Goudeau, Ph., and Denanot, M.F., A Transmission Electron Microscopy Study of Interfacial Reactions in the Fe/GaAs System, Thin Solid Films, 1996, vol. 289, pp. 261–266.
Yang, J., Makihara, K., Nakai, H., Hashimoto, M., Barna, A., and Barna, P.B., Growth Structure of Nickel Films on GaAs(001) by D.C.-Biased Plasma-Sputter-Deposition, Thin Solid Films, 1998, vol. 319, pp. 115–119.
Ermolovich, I.B., Il’in, I.Yu., Konakova, R.V., Milenin, V.V., and Naumovets, A.A., Effect of Ion-Induced Processes on the Characteristics of Metal-GaAs Interfaces, Poverkhnost, 1996, no. 5, pp. 83–87.
Koskia, K., Holsa, J., and Julieta, P., Properties of Aluminum Oxide Thin Films Deposited by Reactive Magnetron Sputtering, Thin Solid Films, 1999, vol. 339, pp. 240–248.
Ferreira, F.F., Tabacniks, M.H., Fantini, M.C.A., Faria, I.C., and Gorenstein, A., Electrochromic Nickel Oxide Thin Films Deposited under Different Sputtering Conditions, Solid State Ionics, 1996, vols. 86–88, pp. 971–976.
Hauffe, K., Reaktionen in und an festen Stoffen, Berlin: Springer, 1966. Translated under the title Reaktsii v tverdykh telakh i na ikh poverkhnosti, Moscow: Inostrannaya Literatura, 1963 [in German and in Russian].
L’Oxydation des métaux, Bénard, J., Ed., Paris: Gauthier-Villars, 1962. Translated under the title Okislenie metallov, Moscow: Metallurgiya, 1968.
Roberts, M. and McKee, C., Chemistry of the Metal-Gas Interface, Oxford: Oxford Univ. Press, 1978. Translated under the title Khimiya poverkhnosti razdela metall-gaz, Moscow: Mir, 1981.
Men’, A.N., Vorob’ev, Yu.P., and Chufarov, G.I., Fizikokhimicheskie svoistva nestekhiometricheskikh okislov (Physicochemical Properties of Nonstoichiometric Oxides), Moscow: Khimiya, 1973 [in Russian].
Tret’yakov, Yu.D., Khimiya nestekhiometricheskikh okislov (Chemistry of Nonstoichiometric Oxides), Moscow: Moscow State University, 1974 [in Russian].
Perel’man, F.M. and Zvorykin, A.Ya., Kobal’t i nikel’ (Cobalt and Nickel), Moscow: Prosveshchenie, 1975 [in Russian].
Hansen, M. and Anderco, K., Constitution of Binary Alloys, New York: McGraw-Hill, 1958. Translated under the title Struktury dvoinykh splavov, Moscow: Metallurgizdat, 1962.
Leygraf, C. and Ekelund, S., A LEED-AES Study of the Oxidation of Fe (110) and Fe (100), Surf. Sci., 1973, vol. 40, no. 3, pp. 609–635.
Pignocco, A.J. and Pellissier, G.E., LEED Studies of Oxygen Adsorption and Oxide Formation on an (011) Iron Surface, Surf. Sci., 1967, vol. 7, no. 3, pp. 261–278.
Tomina, E.V., Sukhochev, A.S., Meshcheryakova, E.K., and Mittova, I.Ya., Effect of Cobalt Thin Layers on the Gallium Arsenide Surface on the Oxidation of Semiconductor, Poverkhnost, 2008 (in press).
Graham, M.J. and Hussey, R.J., Characterization and Growth of Oxide Films, Corros. Sci., 2002, vol. 44, pp. 319–330.
Kazenas, E.K. and Chizhikov, D.M., Davlenie i sostav para nad okislami khimicheskikh elementov (Vapor Pressure and Composition over Oxides of Chemical Elements), Moscow: Nauka, 1976 [in Russian].
Kiselev, Yu.M. and Tretyakov, Yu.D., The Problem of Oxidation State Stabilisation and Some Regularities of a Periodic System of the Elements, Usp. Khim., 1999, vol. 68, no. 5, pp. 401–416.
Kaul, A.R., Gorbenko, O.Yu., and Kamenev, A.A., The Role of Heteroepitaxy in the Development of New Thin-Film Oxide-Based Functional Materials, Usp. Khim., 2004, vol. 73, no. 9, pp. 932–953.
Mittova, I.Ya. and Pshestanchik, V.R., The Chemistry of Processes Which Create Dielectric Layers with Functional Group Substituents on Semiconductors by Impurity Thermo-Oxidation, Usp. Khim., 1991, vol. 60, no. 9, pp. 1898–1919.
Han, Q. and Schmidt-Fetzer, R., Reaction Diffusion at the Interface of Mo/GaAs Contacts, Z. Metallkd., 1993, vol. 84, no. 9, pp. 605–612.
Mittova, I.Ya., Prokin, A.N., Gavryutin, V.N., Sukhochev, A.S., and Kashkarov, V.M., Solid-State Reactions Underlying the Thermal Oxidation of Ni/InP Structures, Neorg. Mater., 2001, vol. 37, no. 4, pp. 399–404 [Inorg. Mater. (Engl. transl.), 2001, vol. 37, no. 4, pp. 321–326].
Akhin’ko, I.A., Grigor’ev, A.T., Gol’dberg, E.Ya., Il’ichev, E.A., Inkin, V.N., Lipshits, T.L., Lotsman, A.P., and Orlova, I.G., Thermal Oxidation in the Technology of GaAs Integrated Circuits, Mikroelektronika, 1996, vol. 25, no. 2, pp. 153–157 [Russ. Microelectron. (Engl. transl.), 1996, vol. 25, no. 2, pp. 138–142].
Mittova, I.Ya., Soshnikov, I.M., Terekhov, V.A., and Shchukarev, A.V., Thermal Oxidation of NiS/InP Structures, Neorg. Mater., 1997, vol. 33, no. 6, pp. 652–654 [Inorg. Mater. (Engl. transl.), 1997, vol. 33, no. 6, pp. 543–545].
Mittova, I.Ya., Tomina, E.V., Samsonov, A.A., Lukin, A.N., and Simonov, S.P., Thermal Oxidation of InP Surfaces Modified with NiO + PbO Mixtures, Neorg. Mater., 2005, vol. 41, no. 4, pp. 391–399 [Inorg. Mater. (Engl. transl.), 2005, vol. 41, no. 4, pp. 323–330].
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © A.S. Sukhochev, E.V. Tomina, I.Ya. Mittova, 2008, published in Fizika i Khimiya Stekla.
Rights and permissions
About this article
Cite this article
Sukhochev, A.S., Tomina, E.V. & Mittova, I.Y. Thermal oxidation of gallium arsenide with transition metal nanolayers on the surface. Glass Phys Chem 34, 724–741 (2008). https://doi.org/10.1134/S1087659608060102
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1087659608060102