Abstract
Electronic structure of hexamethyldisiloxane and octamethylcyclotetrasiloxane has been studied by means of X-ray emission spectroscopy and quantum-chemical simulation at the density functional theory level. From the analysis of the fine structure of X-ray emission SiKβ1-spectra and simulated densities of electronic states, the special features of chemical interactions of Si, O, and C atoms in these molecules are determined.
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Original Russian Text © T.N. Danilenko, M.M. Tatevosyan, V.G. Vlasenko, 2017, published in Zhurnal Obshchei Khimii, 2017, Vol. 87, No. 5, pp. 730–736.
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Danilenko, T.N., Tatevosyan, M.M. & Vlasenko, V.G. X-ray emission spectroscopy and theoretical study of the electronic structure of hexamethyldisiloxane and octamethylcyclotetrasiloxane. Russ J Gen Chem 87, 923–928 (2017). https://doi.org/10.1134/S107036321705005X
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DOI: https://doi.org/10.1134/S107036321705005X