Abstract
Differential thermal analysis (DTA) and X-ray photoelectron spectroscopy (XPS) were used to study the oxidation of dispersed silicon oxide modified with chromium oxide structures by means of molecular layering, under linear heating in air to 1450°C. The mechanism of surface transformations of silicon carbide during its thermal oxidation was considered. It was shown that the oxidation resistance of the samples increased with increasing concentration of chromium in the surface film.
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Original Russian Text © K.S. Anisimov, A.A. Malkov, A.A. Malygin, 2014, published in Zhurnal Obshchei Khimii, 2014, Vol. 84, No. 12, pp. 1954–1961.
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Anisimov, K.S., Malkov, A.A. & Malygin, A.A. Mechanism of thermal oxidation of silicon carbide modified by chromium oxide structures. Russ J Gen Chem 84, 2375–2381 (2014). https://doi.org/10.1134/S1070363214120032
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DOI: https://doi.org/10.1134/S1070363214120032