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Ferromagnetic semiconductor nanostructures—future spintronics

  • Supplement: Rossiiskii Khimicheskii Zhurnal-Zhurnal Rossiiskogo Khimicheskogo Obshchestva im. D.I. Mendeleeva (Russian Chemistry Journal)
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Abstract

The review analyzes and summarizes the principal results of research on the magnetic properties of ferromagnetic semiconductor nanostructures. These materials possess unique physical properties, which attracts great attention both from the scintific and practical viewpoints. The review shows that group AIIBVI and AIIIBV ferromagnetic semiconductors, as well as group IV elemental semiconductors hold the greatest promise for spintronic applications.

Nanostructuring allows to increase the Curie temperature corresponding to the percolation transition in elemental semiconductors. Approaches to overcoming the principal barrier to spintronics applications of ferromagnetic semiconductors-the necessity of their deep cooling-are considered. Comparison of the magnetic and magnetotransport properties of quasi-one-dimensional Ge1−x Mn x nanowires with quasi-two-dimensional nanofilms of the same composition reveals an effect of limited size on the ferromagnetic ordering temperature and magnetic resistance.

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  1. Semenov Institute of Chemical Physics Problems, Russian Academy of Sciences, Prosp. Akad. Semenova 1, Chernogolovka, Moscow Oblast, 142432, Russia

    R. B. Morgunov & A. I. Dmitriev

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Original Russian Text © R.B. Morgunov, Dmitriev, 2010, published in Rossiiskii Khimicheskii Zhurnal, 2010, Vol. 53, No. 2, pp. 36–46.

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Morgunov, R.B., Dmitriev, A.I. Ferromagnetic semiconductor nanostructures—future spintronics. Russ J Gen Chem 80, 591–603 (2010). https://doi.org/10.1134/S1070363210030400

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