Abstract
Special features of the chemical structure of silicon oxides were analyzed by the methods of vibrational and electronic spectroscopy and it was found that cationic (Si-Si) and anionic (O2 and O3) sublattices contain isolated individual Si-CO oscillators, including electron-excited oscillators, and homoatomic bonds. By means of chromatographic and sorption-calorimetric analyses inverse dependence of singlet oxygen specific thermal emission on specific surface area of samples was found that corresponds to volume generation of excited states.
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Original Russian Text © V. B. Kopylov, 2008, published in Zhurnal Obshchei Khimii, 2008, Vol. 78, No. 3, pp. 364–371.
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Kopylov, V.B. On the issue of structure-chemical features of silicon oxides and thermal emission of singlet oxygen. Russ J Gen Chem 78, 347–354 (2008). https://doi.org/10.1134/S1070363208030031
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DOI: https://doi.org/10.1134/S1070363208030031