Abstract
The cadmium mercury telluride solid solution is one of the most important infrared photoelectronic materials in the world. In obtaining this compound, molecular beam epitaxy has a number of advantages over other methods. At the same time, this solid solution is quite demanding on the pre-growth processing of substrates. In this study, the polishing processes are the primary development in mastering the production of cadmium mercury telluride (211) wafers. A roughness value of ~1 nm is obtained.
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Translated by E. Bondareva
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Trofimov, A.A., Denisov, I.A., Smirnova, N.A. et al. Features of Processing of Cadmium Zinc Telluride Wafers for Molecular Beam Epitaxy Growth of Cadmium Mercury Telluride Layers. J. Commun. Technol. Electron. 68, 1114–1125 (2023). https://doi.org/10.1134/S1064226923090255
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DOI: https://doi.org/10.1134/S1064226923090255