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Storage Cell with Analog-to-Digital Conversion for Focal Plane Arrays of the Long-Wave IR Range

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Abstract

Variants of the circuitry of storage cells with analog-to-digital conversion in focal plane arrays (FPAs) of the long-wavelength IR range are considered. The necessity of a multiple increase in the charge capacity of the storage cell to improve the threshold characteristics of the FPA is substantiated. A new version of the storage cell with analog-to-digital conversion, which has several advantages in comparison with analogues (high linearity, low consumption, and low noise) is proposed. The results of the study of a test crystal of a CMOS integrated readout circuit manufactured using the HCMOS8D technology of Mikron JSC with a design standard of 0.18 micrometers are presented.

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Authors and Affiliations

  1. Orion R&P Association JSC, 111538, Moscow, Russia

    P. A. Kuznetsov, A. N. Kuznetsov & Yu. A. Yakimov

Authors
  1. P. A. Kuznetsov
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  2. A. N. Kuznetsov
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  3. Yu. A. Yakimov
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Correspondence to P. A. Kuznetsov.

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The authors declare that they have no conflicts of interest.

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Translated by A. Chikishev

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Kuznetsov, P.A., Kuznetsov, A.N. & Yakimov, Y.A. Storage Cell with Analog-to-Digital Conversion for Focal Plane Arrays of the Long-Wave IR Range. J. Commun. Technol. Electron. 68, 1086–1089 (2023). https://doi.org/10.1134/S1064226923090140

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  • DOI: https://doi.org/10.1134/S1064226923090140

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