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Analytical Model of Quantum Efficiency of Indium-Antimonide Photodiodes

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Abstract

The spectral characteristics of indium-antimonide photodetectors working in the mid-IR spectral range for detection, recognition, and identification of thermal objects are studied. The quantum efficiency is calculated versus the design parameters of photodiodes with allowance for the passage of radiation through antireflection coating and reflection from the p+-layer/ohmic contact interface with subsequent reabsorption in the photodiode structure. An analytical model of the absorption coefficient of indium antimonide taking into account the Burstein–Moss effect and the Urbach rule is developed. The optimal thickness of the base layer of the photodiode is determined for different lifetimes of minority carriers.

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Authors and Affiliations

  1. Research and Production Enterprise “Orion”, 111538, Moscow, Russia

    V. S. Kovshov & N. I. Yakovleva

  2. Moscow Institute of Physics and Technology, 141701, Dolgoprudnyi, Moscow oblast, Russia

    V. S. Kovshov & A. V. Nikonov

Authors
  1. V. S. Kovshov
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  2. N. I. Yakovleva
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  3. A. V. Nikonov
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Correspondence to V. S. Kovshov.

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Translated by A. Chikishev

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Kovshov, V.S., Yakovleva, N.I. & Nikonov, A.V. Analytical Model of Quantum Efficiency of Indium-Antimonide Photodiodes. J. Commun. Technol. Electron. 68, 1077–1085 (2023). https://doi.org/10.1134/S1064226923090139

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  • DOI: https://doi.org/10.1134/S1064226923090139

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