Abstract
We report on the investigations of focal plane arrays for mid-wave infrared radiation detection based on antimonide multilayers with InSb, AlxIn1 – xSb, and InAs1 – xSbx absorption layers, including structures with InAlSb (InSb/InAlSb/InSb) and InAsSb (InAsSb/AlAsSb/InAsSb) barrier layers for optoelectronic systems and equipment. Photosensitive elements of different topologies have been fabricated. It has been demonstrated that wideband AlxIn1-xSb and InAs1 – xSbx ternary alloys are an alternative to the narrowband InSb binary compound, since the photodiodes based on them exhibit lower dark currents and, consequently, low noise. The average values of detectivity D* and noise equivalent temperature difference for the photodetectors based on photosensitive element arrays of different topologies have been measured.
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Translated by E. Bondareva
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Boltar, K.O., Lopuhin, A.A., Vlasov, P.V. et al. Focal Plane Arrays Based on the Binary and Ternary Antimonide-Group Homo- and Heterostructures. J. Commun. Technol. Electron. 68, 1029–1035 (2023). https://doi.org/10.1134/S1064226923090048
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DOI: https://doi.org/10.1134/S1064226923090048