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Modern Photodetector IR-Modules

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Abstract

In recent years, there has been a rapid improvement in photonics products due to the use of multilayer heterostructures grown on the basis of advanced materials; designing the structure of a photosensitive element (PSE) to achieve the minimum dark current, which in turn leads to a change in generations of matrix photodetector modules (PDMs). Several different types of PDMs based on InSb epitaxial structures for the range of 3–5 μm, based on GaAs/AlGaAs QWIP-structures for the range 7.8–9.0 μm, and based on InGaAs XBn-structures for the range 0.9–1.7 μm were developed and investigated. The foreign analogs are shown, and the advantages given by the new capabilities offered by new detector technologies are considered.

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Authors and Affiliations

  1. Orion R&P Association, JSC, 111538, Moscow, Russia

    K. O. Boltar, I. D. Burlakov, N. I. Iakovleva, P. V. Vlasov & P. S. Lazarev

  2. Moscow Institute of Physics and Technology, 141701, Dolgoprudny, Moscow oblast, Russia

    K. O. Boltar & P. S. Lazarev

  3. Russian Technological University (MIREA), 119454, Moscow, Russia

    I. D. Burlakov

Authors
  1. K. O. Boltar
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  2. I. D. Burlakov
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  3. N. I. Iakovleva
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  4. P. V. Vlasov
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  5. P. S. Lazarev
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Correspondence to K. O. Boltar or N. I. Iakovleva.

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Translated by E. Chernokozhin

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Boltar, K.O., Burlakov, I.D., Iakovleva, N.I. et al. Modern Photodetector IR-Modules. J. Commun. Technol. Electron. 67, 1175–1184 (2022). https://doi.org/10.1134/S1064226922090030

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  • DOI: https://doi.org/10.1134/S1064226922090030

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