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Electronic Transport in InAs/AlSb Superlattices with Electric Domains

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Abstract

The series of almost voltage-periodic maxima found earlier in current–voltage characteristics of InAs/AlSb superlattices (SLs) at the voltage range of domain formation is studied. These oscillations are examined in InAs/AlSb SLs with different quantum well (QW) widths. It is found that the periodic changes of current in SLs with wide QW widths are caused by jumps of domain boundary between adjacent QWs. The considerably larger oscillation periods in narrow-QW SLs are supposed to be the result of considerable increase in the peak electric field inside the triangular domain which makes possible optical phonon-assisted tunneling between neighboring QWs.

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ACKNOWLEDGMENTS

This work was carried out within the framework of the state task at Kotelnikov Institute of Radioengineering and Electronics of RAS, and partially supported by RFBR projects 20-02-00624 and 20-52-16304. The equipment of the Unique Science Unit “Cryointegral” (USU #352529) was used, which was supported by the Ministry of Science and Higher Education of Russia (project no. 075-15-2021-667).

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Correspondence to M. S. Kagan.

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Altukhov, I.V., Dizhur, S.E., Kagan, M.S. et al. Electronic Transport in InAs/AlSb Superlattices with Electric Domains. J. Commun. Technol. Electron. 67, 882–883 (2022). https://doi.org/10.1134/S1064226922070026

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  • DOI: https://doi.org/10.1134/S1064226922070026

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