Abstract
In this study we investigated the dependences of the rate of ion-beam etching of the upper contact layer (GaAs:Si), an active region consisting of a 50-fold alternation of barrier layers (AlxGa1–xAs) and quantum wells (GaAs:Si) and the lower contact layer (GaAs:Si) along the depth of QWIP structures based on GaAs–AlGaAs, fabricated by molecular beam epitaxy (MBE), in order to determine the effect of the composition of various layers on the etching rate and the ability to complete the etching process to the desired depth in time.
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REFERENCES
I. D. Burlakov, K. O. Boltar’, and M. V. Sednev, Prikl. Fiz., No. 5, 58 (2007).
M. V. Sednev, K. O. Boltar’, Yu. S. Mezin, E. A. Klimanov, and Yu. P. Sharonov, Prikl Fiz., No. 1, 90 (2012).
I. D. Burlakov, A. I. Dirochka, M. D. Korneeva, V. P. Ponomarenko, and A. M. Filachev, Usp. Prikl. Fiz. 2, 509 (2014).
Cocle Olivier, Rannou Christophe, Forestier Bertrand, Bois Paul Jougla, Philippe F., Costard Eric M., Manissadjian A., and Gohier D., Qwip compact thermal imager: CATHERINE-XP and its evolutions (SPIE Defense & Security, 2007–[6542-127] ORLANDO 2007).
M. V. Sednev, K. O. Boltar’, Yu. P. Sharonov, and A. A. Lopukhin, Prikl. Fiz., No. 4, 51 (2013).
A. V. Trukhachev, M. V. Sednev, and N. S. Trukhacheva, Prikl. Fiz., No. 5, 55 (2018).
A. V. Nikonov, P. S. Skrebneva, and N. I. Yakovleva, Prikl. Fiz., No. 1, 31 (2017).
Yu. G. Yakushenkov, Theory and Calculation of Optical-Electronic Devices. Textbook (Logos, Moscow, 2012).
K. O. Boltar’, E. N. Zubkova, N. A. Irodov, M. V. Sednev, D. V. Smirnov, and Yu. P. Sharonov, Prikl. Fiz., No. 4, 5 (2013).
M. Driesen, K. Wouters, and R. Puers, in Proc. Eur. XXIII Conf. Procedia Chemistry, Lausanne, Sept. 6–9, 2009 (Procedia Chemistry, Lausanne, 2009), Vol. 1, pp. 796–799 (2009).
Yeo-Song Seol, Jae-I-Ice Ha, Chul-Kyu Bok, Hee-Kook Park, and Kye-Hwan Oh, Mater. Chemist. and Phys. 35, 134 (1993).
N. S. Trukhacheva, M. V. Sednev, A. V. Trukhachev, E. A. Makarova, and K. V. Naumova, Prikl. Fiz., No. 2, 41 (2018).
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Trukhachev, A.V., Sednev, M.V., Trukhacheva, N.S. et al. Investigation of the Depth and Rate of Ion Etching of QWIP Structures. J. Commun. Technol. Electron. 66, 358–361 (2021). https://doi.org/10.1134/S1064226921030190
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DOI: https://doi.org/10.1134/S1064226921030190