Abstract
The influence of various etching processes on the single-crystalline (100) silicon surface is studied. It is demonstrated that microstructuring of the surface of high-resistivity single-crystalline silicon in alkaline solutions is better performed using electrolytic methods at temperatures no lower than 80°C. Etch patterns with better-defined side faces are formed by anisotropic etching with the addition of hydrogen peroxide.
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Translated by D. Safin
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Kashuba, A.S., Permikina, E.V., Golovin, S.V. et al. Microstructuring of the Surface of High-Resistivity Single-Crystalline Silicon by Chemical Etching. J. Commun. Technol. Electron. 64, 1030–1033 (2019). https://doi.org/10.1134/S1064226919090109
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DOI: https://doi.org/10.1134/S1064226919090109