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Study of Photodiodes Based on the InGaAs Structure with a Boundary Wavelength of 2.06 μm

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Abstract

I–V characteristics and spectral photosensitivities of photodiodes based on epitaxially grown hydrides of metal-organic compounds (MOC-hydride epitaxy) of epitaxial structures with the In0.67Ga0.33As absorbing layer doped with Zn on the InP substrates are studied. The photodiodes are fabricated using the mesatechnology. The long-wavelength boundary of the spectral photosensitivity of diodes measured at half-maximum is 2.06 μm at room temperature. Photosensitivity spectra are studied in a temperature interval of 230–300 K.

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Authors and Affiliations

  1. Orion R&P Association, 111538, Moscow, Russia

    K. O. Boltar, N. A. Irodov, M. V. Sednev & M. A. Ladugin

  2. Moscow Institute of Physics and Technology (State University), 141700, Dolgoprudnyi, Moscow oblast, Russia

    K. O. Boltar

  3. Stel’makh Research Institute “Polyus”, 117342, Moscow, Russia

    A. A. Marmalyuk & Yu. L. Ryaboshtan

Authors
  1. K. O. Boltar
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  2. N. A. Irodov
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  3. M. V. Sednev
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  4. A. A. Marmalyuk
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  5. M. A. Ladugin
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  6. Yu. L. Ryaboshtan
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Corresponding authors

Correspondence to K. O. Boltar or A. A. Marmalyuk.

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Translated by A. Chikishev

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Boltar, K.O., Irodov, N.A., Sednev, M.V. et al. Study of Photodiodes Based on the InGaAs Structure with a Boundary Wavelength of 2.06 μm. J. Commun. Technol. Electron. 64, 283–285 (2019). https://doi.org/10.1134/S1064226919030021

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  • DOI: https://doi.org/10.1134/S1064226919030021

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