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Diamond Diode Structures Based on Homoepitaxial Films

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Abstract

(m–i–p)-Structures with high-resistance epitaxial i-layers are fabricated on heavily doped p+-type substrates with platinum contacts. The structures are studied using several methods: optical and electron microscopy and luminescence, and electrophysical (C–V and I–V characteristics) methods and tested as detectors of ionizing radiation. It is shown that the (m–i–p)-structures are promising for development of several electronic devices (high-voltage diodes, detectors of ionizing radiation, and photovoltaic devices).

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Authors and Affiliations

  1. Troitsk Institute for Innovation and Fusion Research, Troitsk, Moscow, 10884, Russia

    N. B. Rodionov & A. F. Pal’

  2. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow, 119991, Russia

    A. P. Bol’shakov & V. G. Ral’chenko

  3. Lebedev Physical Institute, Russian Academy of Sciences, Moscow, 119991, Russia

    R. A. Khmel’nitskiy, V. A. Dravin & S. A. Malykhin

  4. Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, 125009, Russia

    I. V. Altukhov, M. S. Kagan & S. K. Paprotskiy

Authors
  1. N. B. Rodionov
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  2. A. F. Pal’
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  3. A. P. Bol’shakov
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  4. V. G. Ral’chenko
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  5. R. A. Khmel’nitskiy
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  6. V. A. Dravin
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  7. S. A. Malykhin
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  8. I. V. Altukhov
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  9. M. S. Kagan
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  10. S. K. Paprotskiy
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Corresponding author

Correspondence to S. K. Paprotskiy.

Additional information

Original Russian Text © N.B. Rodionov, A.F. Pal’, A.P. Bol’shakov, V.G. Ral’chenko, R.A. Khmel’nitskiy, V.A. Dravin, S.A. Malykhin, I.V. Altukhov, M.S. Kagan, S.K. Paprotskiy, 2018, published in Radiotekhnika i Elektronika, 2018, Vol. 63, No. 7, pp. 750–757.

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Rodionov, N.B., Pal’, A.F., Bol’shakov, A.P. et al. Diamond Diode Structures Based on Homoepitaxial Films. J. Commun. Technol. Electron. 63, 828–834 (2018). https://doi.org/10.1134/S1064226918070148

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  • DOI: https://doi.org/10.1134/S1064226918070148

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