Influence of Indirect Transitions on Optical Characteristics of A3B5 Heteroepitaxial Layers
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The influence of indirect transitions of Г-L and Г-Х types in the Brillouin zone on optical and electrophysical characteristics of heteroepitaxial layers of А3В5 compounds is estimated by the example of ternary (InGaAs) and quaternary (InGaAsP) compounds. It has been found that consideration of indirect transitions lowers the refractive index of semiconductor compounds by up to 15% in a narrow wavelength range of 0.4—0.6 μm.
KeywordsBrillouin zone A3B5 compounds InGaAs indirect transitions permittivity refractive index
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