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Influence of Indirect Transitions on Optical Characteristics of A3B5 Heteroepitaxial Layers

  • A. V. Nikonov
  • N. I. Iakovleva
Articles from the Russian Journal Prikladnaya Fizika
  • 11 Downloads

Abstract

The influence of indirect transitions of Г-L and Г-Х types in the Brillouin zone on optical and electrophysical characteristics of heteroepitaxial layers of А3В5 compounds is estimated by the example of ternary (InGaAs) and quaternary (InGaAsP) compounds. It has been found that consideration of indirect transitions lowers the refractive index of semiconductor compounds by up to 15% in a narrow wavelength range of 0.4—0.6 μm.

Keywords

Brillouin zone A3B5 compounds InGaAs indirect transitions permittivity refractive index 

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References

  1. 1.
    A. M. Filachev, I. I. Taubkin, and M. A. Trishenkov, Current State and Main Directions of the Development of Solid-State Photoelectronics (Fizmatkniga, Moscow, 2010) [in Russian].Google Scholar
  2. 2.
    I. D. Burlakov, A. I. Dirochka, M. D. Korneeva, et al., Usp. Prikl. Fiz. 2, 509 (2014).Google Scholar
  3. 3.
    R. E. Nahory, M. A. Pollack, W. D. Johnson, and R. L. Barns, Appl. Phys. Lett. 33, 659 (1978).CrossRefGoogle Scholar
  4. 4.
    B. Reid, R. Maciejko, and A. Champagne, Can. J. Phys. 71, 410 (1993).CrossRefGoogle Scholar
  5. 5.
    S. Adachi, J. Appl. Phys. 66, 6030 (1989).CrossRefGoogle Scholar
  6. 6.
    S. Adachi, Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP (Wiley, New York, 1992).CrossRefGoogle Scholar
  7. 7.
    B. Jensen and A. Torabi, J. Appl. Phys. 54, 3623 (1983).CrossRefGoogle Scholar
  8. 8.
    A. R. Denton and N. W. Ashcroft, Phys. Rev. A 43, 3161 (1991).CrossRefGoogle Scholar
  9. 9.
    A. V. Nikonov, N. M. Kulyakhtina, N. I. Iakovleva, and K. O. Boltar, Prikl. Fiz., No. 5, 21 (2015).Google Scholar
  10. 10.
    P. S. Skrebneva, A. V. Nikonov, N. I. Iakovleva, and V. P. Ponomarenko, Usp. Prikl. Fiz. 3, 481 (2015).Google Scholar

Copyright information

© Pleiades Publishing, Inc. 2018

Authors and Affiliations

  1. 1.Orion Research and Production AssociationMoscowRussia
  2. 2.Moscow Institute of Physics and Technology (State University)Dolgoprudnyi, Moscow oblastRussia

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