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InGaAs/AlGaAs QWIP Heterostructures for Large-Format Focal Plane Arrays Photosensitive in the Spectral Range 3–5 μm

  • A. L. Dudin
  • N. I. Katsavets
  • D. M. Krasovitsky
  • S. V. Kokin
  • V. P. Chaly
  • I. V. Shukov
Articles from the Russian Journal Prikladnaya Fizika
  • 21 Downloads

Abstract

Photoelectric properties of different stressed InGaAs/AlGaAs heterostructures with quantum wells grown by the method of molecular beam epitaxy on GaAs substrates for mid-wavelength infrared largeformat photodetector arrays operating in the spectral range 3–5 μm have been investigated. It has been shown that the change in the composition of barrier layers leads to a significant shift of the photosensitivity spectra of such heterostructures.

Keywords

heterostructure quantum well photosensitivity 

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Copyright information

© Pleiades Publishing, Inc. 2018

Authors and Affiliations

  • A. L. Dudin
    • 1
  • N. I. Katsavets
    • 1
  • D. M. Krasovitsky
    • 1
  • S. V. Kokin
    • 1
  • V. P. Chaly
    • 1
  • I. V. Shukov
    • 1
  1. 1.ZAO Svetlana-RostSt. PetersburgRussia

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