Methods for Calculation and Control of the Impurity Difference Dose in Avalanche InGaAs/InP Structures

  • A. K. Budtolaev
  • N. V. Kravchenko
  • P. E. Khakuashev
  • I. V. Chinareva
Articles from the Russian Journal Prikladnaya Fizika
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Abstract

Methods for calculation and control of impurity difference dose Qа during the planar procedure of fabrication of avalanche photodiodes (APDs) based on heteroepitaxial InGaAs/InP structures are presented. The developed methods for the difference dose control in avalanche InGaAs/InP structures have been used at various stages of APD fabrication. It has been demonstrated that a tighter impurity dose control from the manufacturer of epitaxial structures, coordination of dose measurement procedures, and correction of diffusion processes for specific impurity doses are needed.

Keywords

avalanche photodiode epitaxial heterostructures InGaAs/InP difference dose 

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Copyright information

© Pleiades Publishing, Inc. 2018

Authors and Affiliations

  • A. K. Budtolaev
    • 1
  • N. V. Kravchenko
    • 1
  • P. E. Khakuashev
    • 1
  • I. V. Chinareva
    • 1
  1. 1.Orion Research and Production AssociationMoscowRussia

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