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Operating principles of reactance-less memristor-based oscillators

  • Physical Processes in Electron Devices
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Abstract

The aspects of design of reactance-less oscillators based on memristors are considered. The requirements on load elements in the circuits of such oscillators are formulated. The equations describing the dynamical behavioral of the memristor oscillators with the use of linear-drift models are presented. Examples of the analysis and synthesis of oscillators using such equations are presented. The possibility of generation in the circuits under consideration of periodic signals with a waveform close to harmonic oscillations is shown.

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References

  1. L. Chua, IEEE Trans. Commun. Technol. 18, 507 (1971).

    Google Scholar 

  2. L. Chua and S. M. Kang, Proc. IEEE 64, 209 (1976).

    Article  MathSciNet  Google Scholar 

  3. D. B. Strukov, G. S. Snider, and D. R. Stewart, Nature 453 (7250), 80 (2008).

    Article  Google Scholar 

  4. P. Mazumder, S. M. Kang, and R. Waser, Proc. IEEE 100, 1911 (2012).

    Article  Google Scholar 

  5. M. Itoh and L. O. Chua, Int. J. Bifurcation Chaos in Appl. Sci. and Eng. 18, 3183 (2008).

    Article  Google Scholar 

  6. T. Driscoll, Y. Pershin, D. Basov, and M. Di Ventra, Appl. Phys. A 102, 885 (2011).

    Article  Google Scholar 

  7. A. Talukdar, A. G. Radwan, and K. N. Salama, Microelectronics J. 42, 1032 (2011).

    Article  Google Scholar 

  8. A. Talukdar, A. G. Radwan, and K. N. Salama, Appl. Nanosci., No. 1, 143 (2011).

    Article  Google Scholar 

  9. M. Zidan, H. Omran, A. G. Radwan, and K. N. Salama, Electronics Lett. 47, 1220 (2011).

    Article  Google Scholar 

  10. M. Zidan, H. Omran, C. Smith, et al. Int. J. Circuit Theory Appl. 42, 1103 (2014).

  11. A. Mosad, Microelectronics J. 44, 814 (2013).

    Article  Google Scholar 

  12. E. Gale, Semicond. Sci. Technol. 29, 104004 (2014).

    Article  Google Scholar 

Download references

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Authors and Affiliations

  1. Institute for Design Problems in Microelectronics, Russian Academy of Sciences, Zelenograd, Moscow, 124365, Russia

    V. V. Rakitin & S. G. Rusakov

  2. Lukin Scientific Research Institute of Physical Problems, Zelenograd, Moscow, 124460, Russia

    V. V. Rakitin

Authors
  1. V. V. Rakitin
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  2. S. G. Rusakov
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Corresponding author

Correspondence to S. G. Rusakov.

Additional information

Original Russian Text © V.V. Rakitin, S.G. Rusakov, 2017, published in Radiotekhnika i Elektronika, 2017, Vol. 62, No. 6, pp. 601–606.

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Rakitin, V.V., Rusakov, S.G. Operating principles of reactance-less memristor-based oscillators. J. Commun. Technol. Electron. 62, 621–625 (2017). https://doi.org/10.1134/S1064226917060183

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  • DOI: https://doi.org/10.1134/S1064226917060183

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