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Investigation of spectral dependences of the absorption coefficient in InGaAs layers

  • Articles from the Russian Journal Prikladnaya Fizika
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Abstract

Values of the absorption coefficient of InGaAs structures grown by means of gaseous-phase epitaxy from metaloranic compounds have been studied and calculated. Experimental data have been compared to the theoretical model of the absorption spectrum based on the phenomenon of fundamental absorption and the general theory of direct interband optical transitions. The energy gap width has been graphically calculated from the slope of the experimental absorption characteristic.

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Authors and Affiliations

  1. Orion Research and Production Association, Moscow, 111535, Russia

    N. I. Iakovleva & A. V. Nikonov

  2. Moscow Institute of Physics and Technology (State University), Dolgoprudnyi, Moscow oblast, 141700, Russia

    A. V. Nikonov

Authors
  1. N. I. Iakovleva
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  2. A. V. Nikonov
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Correspondence to N. I. Iakovleva.

Additional information

Original Russian Text © N.I. Iakovleva, A.V. Nikonov, 2016, published in Prikladnaya Fizika, 2016, No. 2, pp. 88–93.

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Iakovleva, N.I., Nikonov, A.V. Investigation of spectral dependences of the absorption coefficient in InGaAs layers. J. Commun. Technol. Electron. 62, 331–335 (2017). https://doi.org/10.1134/S1064226917030226

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  • DOI: https://doi.org/10.1134/S1064226917030226

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