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Analysis of the nBn-type barrier structures for infrared photodiode detectors

  • Articles from the Russian Journal Prikladnaya Fizika
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Abstract

Modern trends in the technology of Cd x Hg1–x Te-based photosensitive barrier structures for the middle and far infrared bands, which can operate at near-room temperatures, are analyzed. Main approaches to solving the problem of increasing the photodiode-detector operating temperature have been considered and analyzed.

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Authors and Affiliations

  1. Tomsk State University, Tomsk, 634050, Russia

    A. V. Voitsekhovskii & D. I. Gorn

Authors
  1. A. V. Voitsekhovskii
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  2. D. I. Gorn
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Correspondence to A. V. Voitsekhovskii.

Additional information

Original Russian Text © A.V. Voitsekhovskii, D.I. Gorn, 20116, published in Prikladnaya Fizika, 2016, No. 4, pp. 83–86.

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Voitsekhovskii, A.V., Gorn, D.I. Analysis of the nBn-type barrier structures for infrared photodiode detectors. J. Commun. Technol. Electron. 62, 314–316 (2017). https://doi.org/10.1134/S1064226917030214

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  • DOI: https://doi.org/10.1134/S1064226917030214

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