Abstract
The time of independent operation t ind of indium antimonide photoresistors and photodiodes and photoresistors based on Cd х Hg1–х Te (х ~ 0.3) heterostructures deeply cooled with a Joule–Thomson throttling system is investigated. The largest independent operation time (taut ≥ 28 s) was obtained for Cd х Hg1–х Te (х ~ 0.3) photoresistors. Time t ind of the photoresistors and photodiodes is found to be related to the temperature of transition of the semiconductor materials from the impurity region to the intrinsic region. The possibility of increasing time t ind of the photodetectors by optimizing the requirements for the characteristics of InSb and Cd х Hg1–х Te is discussed.
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References
A. V. Filatov, E. V. Susov, V. P. Astakhov, et al., “A photoresistor on the basis of InSb,” RF Useful Model Patent RU 121102, Byull. Izobret. Poleznye Modeli, No. 28 (10.10.2012).
A. V. Filatov, E. V. Susov, V. V. Karpov, et al., “A photoresistor on the basis of CdHgTe,” RF Useful Model Patent RU 126512, Byull. Izobret. Poleznye Modeli, No. 9 (27.03.2013).
V. P. Astakhov, P. D. Gindin, V. P. Ezhov, et al., “A photodiode on the basis of indium antimonide,” RF Patent RU 2324259, Byull. Izobret. Poleznye Modeli, No. 13. (10.05.2008).
Physics of Group IV Elements and III—V Compounds, Ed. O. Madelung (Springer-Verlag, Berlin, 1982; Mir, Moscow, 1967).
A. Rogal’skii, Infrared Detectors (Nauka, Novosibirsk, 2003) [in Russian].
http://www.ioffe.ru/SVA/NSM/Semicond/InSb/electric. html.
V. P. Astakhov, G. S. Solov’eva, and A. V. Artamonov, Prikl. Fiz., No. 5, 71 (2015).
M. A. Kinch, M. J. Brau, and A. Simmons, J. Appl. Phys. 44, 1649 (1973).
G. L. Hansen, J. L. Schmit, and T. N. Casselman, J. Appl. Phys. 53, 7099 (1982).
J. J. Dubowski, T. Dietl, W. Szymanska, and R. R. Galazka, J. Phys. Chem. Solids 42, 351 (1981).
M. H. Weiler, Semiconductors and Semimetals, Ed. by R. K. Willardson and A. C. Beer, (Academic, NewYork, 1981), Vol. 6, p. 119.
A. V. Filatov, E. V. Susov, A. V. Gusarov, et al., Opt. Zh. 76 (12), 49 (2009)
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Original Russian Text © A.V. Filatov, E.V. Susov, V.V. Karpov, V.A. Zhilkin, S.P. Ljubchenko, N.S. Kusnezov, A.V. Marushchenko, 2016, published in Prikladnaya Fizika, 2016, No. 3, pp. 45–50.
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Filatov, A.V., Susov, E.V., Karpov, V.V. et al. Independent operation time of photodetectors of the (3—5)-μm spectral band based on InSb and CdHgTe heteroepitaxial structures. J. Commun. Technol. Electron. 62, 326–330 (2017). https://doi.org/10.1134/S106422691703010X
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DOI: https://doi.org/10.1134/S106422691703010X