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Experimental study of burnout of microwave bipolar transistors under action of a series of electric pulses

  • Physical Processes in Electron Devices
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Abstract

Burnout of silicon transistors under the action of a periodic train of electric pulses is experimentally studied. A numerical model and a more physically demonstrative analytical model of the pulse-to-pulse heat accumulation are in qualitative and, to a certain extent, quantitative agreement with the measured results. It is demonstrated that catastrophic failure takes place at a melting point of silicon but additional heat is needed for melting of low-temperature eutectics.

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Author information

Authors and Affiliations

  1. Mozhaiskii Military Space Academy, Zhdanovskaya ul. 13, St. Petersburg, 197082, Russia

    A. A. Sasunkevich

  2. Peter The Great Polytechnic University, 29 Polytechnic street, St. Petersburg, 195251, Russia

    L. N. Sorokin & V. G. Usychenko

Authors
  1. A. A. Sasunkevich
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  2. L. N. Sorokin
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  3. V. G. Usychenko
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Corresponding author

Correspondence to A. A. Sasunkevich.

Additional information

Original Russian Text © A.A. Sasunkevich, L.N. Sorokin, V.G. Usychenko, 2016, published in Radiotekhnika i Elektronika, 2016, Vol. 61, No. 7, pp. 702–710.

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Sasunkevich, A.A., Sorokin, L.N. & Usychenko, V.G. Experimental study of burnout of microwave bipolar transistors under action of a series of electric pulses. J. Commun. Technol. Electron. 61, 837–845 (2016). https://doi.org/10.1134/S1064226916070093

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  • DOI: https://doi.org/10.1134/S1064226916070093

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