Abstract
SWIR ADP 320 × 256 FPAs based on p–i–n photodiodes in InGaAs heterostructures have been developed and investigated. The typical InGaAs/InP PIN heterostructures are formed by Metal Organic Vapor Phase Epitaxy (MOVPE) on n + type InP substrates. The InGaAs/InP PIN photodiodes performance have been estimated by measuring current-voltage characteristics. APD arrays are designed using a mesa-passivated avalanche photodiode device array of p–i–n junctions in heterostructure with common absorption and multiplication regions. The optimal operating point for managing avalanche application depended on various factors has been started at 15 V bias and the multiplication coefficient was of 2–4.
Similar content being viewed by others
References
A. M. Filachev, I. I. Taubkin, and M. A. Trishenkov, Solid-State Photoelectronics. Photodiodes (Fizmatkniga, Moscow, 2011) [in Russian].
A. M. Filachev, I. I. Taubkin, and M. A. Trishenkov, Current State and Main Directions of Development of Modern Photoelectronics (Fizmatkniga, Moscow, 2010) [in Russian].
F. Guellec, M. Tchagaspanian, P. Ballet, et al., Proc. SPIE 6940, 69402 (2008).
R. Heinrichs, B. F. Aull, R. M. Marino, et al., Proc. SPIE 4377, 106 (2001).
M. A. Itzler, M. Entwistle, M. Owens, et al., Proc. SPIE 7780, 77801 (2010).
Ping Yuan, Rengarajan Sudharsanan, Xiaogang Bai, et al., Proc. SPIE 8037, 803712 (2011).
A. I. Dirochka, M. D. Korneeva, and A. M. Filachev, Prikl. Fiz., No. 2, 37 (2011).
M. D. Korneeva, V. P. Ponomarenko, and A. M. Filachev, Prikl. Fiz., No. 2, 47 (2011).
M. D. Korneeva, V. P. Ponomarenko, and A. M. Filachev, Prikl. Fiz., No. 3, 82 (2011).
I. Gyuro, Compound Semiconductor Industry Directory (Elsevier Science Ltd, Dordrecht, 1996).
G. B. Stringfellow, Organometallic Vapor-Phase Epitaxy: Theory and Practice (Academic, New York, 1999).
G. H. Olsen and V. S. Ban, Solid State Technol., No. 2, 99 (1987).
K. O. Boltar, I. V. Chinareva, A. A. Lopukhin, and N. I. Iakovleva, Prikl. Fiz., No. 5, 10 (2013).
S. Demiguel, Proc. SPIE 7298, 729836 (2009).
D. S. Andreev, N. B. Zaletaev, P. E. Khakuashev, et al., Prikl. Fiz., No. 6 (2013).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © N.I. Iakovleva, K.O. Boltar, M.V. Sednev, A.I. Patrashin, N.A. Irodov, 2014, published in Prikladnaya Fizika, 2014, No. 2, pp. 45–49.
Rights and permissions
About this article
Cite this article
Iakovleva, N.I., Boltar, K.O., Sednev, M.V. et al. Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures. J. Commun. Technol. Electron. 61, 319–323 (2016). https://doi.org/10.1134/S1064226916030207
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1064226916030207