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Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures

  • Articles from the Russian Journal Prikladnaya Fizika
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Abstract

SWIR ADP 320 × 256 FPAs based on pin photodiodes in InGaAs heterostructures have been developed and investigated. The typical InGaAs/InP PIN heterostructures are formed by Metal Organic Vapor Phase Epitaxy (MOVPE) on n + type InP substrates. The InGaAs/InP PIN photodiodes performance have been estimated by measuring current-voltage characteristics. APD arrays are designed using a mesa-passivated avalanche photodiode device array of pin junctions in heterostructure with common absorption and multiplication regions. The optimal operating point for managing avalanche application depended on various factors has been started at 15 V bias and the multiplication coefficient was of 2–4.

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Correspondence to N. I. Iakovleva.

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Original Russian Text © N.I. Iakovleva, K.O. Boltar, M.V. Sednev, A.I. Patrashin, N.A. Irodov, 2014, published in Prikladnaya Fizika, 2014, No. 2, pp. 45–49.

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Iakovleva, N.I., Boltar, K.O., Sednev, M.V. et al. Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures. J. Commun. Technol. Electron. 61, 319–323 (2016). https://doi.org/10.1134/S1064226916030207

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  • DOI: https://doi.org/10.1134/S1064226916030207

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