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Diagnostics of differential parameters in models of field-effect transistors

  • Physical Processes in Electron Devices
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Abstract

The feasibility of increasing the accuracy of simulation of differential parameters in the models of field-effect transistors and, therefore, of the frequency characteristics of radio circuits by separate diagnostics of static and differential parameters is considered. The feasibility of reaching the simulation error of the same order for both types of parameters is demonstrated.

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Authors and Affiliations

  1. Southern Federal University, per. Nekrasovskii 44, Taganrog, 347930, Russia

    V. N. Biryukov, A. M. Pilipenko, I. V. Semernik & I. V. Shekhovtsova

Authors
  1. V. N. Biryukov
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  2. A. M. Pilipenko
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  3. I. V. Semernik
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  4. I. V. Shekhovtsova
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Correspondence to V. N. Biryukov.

Additional information

Original Russian Text © V.N. Biryukov, A.M. Pilipenko, I.V. Semernik, I.V. Shekhovtsova, 2015, published in Radiotekhnika i Elektronika, 2015, Vol. 60, No. 8, pp. 865–872.

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Biryukov, V.N., Pilipenko, A.M., Semernik, I.V. et al. Diagnostics of differential parameters in models of field-effect transistors. J. Commun. Technol. Electron. 60, 928–935 (2015). https://doi.org/10.1134/S1064226915070037

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  • DOI: https://doi.org/10.1134/S1064226915070037

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