Abstract
It is proposed to use frequency-dependent absorbers, which have significantly higher attenuation at the low frequency than at the high one for extension of the bandwidth of high-power wideband helical traveling-wave tubes (TWTs) toward lower frequencies. Calculations carried out for a TWT with an operating frequency band of more than two octaves show that, due to this modification, the output power at lower frequencies increases and the level of the second harmonic decreases.
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O. Sauseng, in Proc. 8th Int. Congr. MOGA, Netherlands, 1970 (MOGA, Netherlands, 1970), p. 5.34.
L. V. Pozdnyakov and T. Yu. Selikhova, Obz. Elektron. Tekh., Ser. 1: Elektron. SVCh (Moscow), Pt. 2, No. 3 (1978).
S. E. Webber, IRE Trans. Electron. Devices 1, 35 (1954).
E. G. Solov’ev and L. V. Belous, Radiotekhnika 11 (4), 32 (1956).
M. Müller, FTZ 8 (1), 29 (1965).
R. A. Silin and V. P. Sazonov, Slow-Wave Systems (Sovetskoe Radio, Moscow, 1966) [in Russian].
M. Güttler, DE Patent No. 1075171 (4.08.1960).
A. E. Manoly, US Patent No. 4005329 (25.01.1977).
HFSS Ansoft, Version 12.1.2 (SAS IP, 2010).
L. V. Pozdnyakov, Obz. Elektron. Tekh., Ser. 1: Elektron. SVCh (Moscow), Pt. 3, No. 2 (1980).
E. M. Il’ina, V. A. Filatov, and Yu. F. Kontorin, in Proc. 12th Winter Workshop on Microwave Electronics and Radio Physics, Saratov, Russia, 2002 (Gos. UNTs Kolledzh, Saratov, 2002), p. 40.
A. B. Danilov, E. M. Il’ina, and A. D. Rafalovich, in Proc. 13th IEEE Int. Vacuum Electron. and Vacuum Electron. Sources Conf. (IVEC-IVESC 2012), Monterey, California, USA, Apr. 24–26, 2012 (IEEE, New York, 2012), p. 269.
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Original Russian Text © A.B. Danilov, E.M. Il’ina, 2015, published in Radiotekhnika i Elektronika, 2015, Vol. 60, No. 8, pp. 851–854.
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Danilov, A.B., Il’ina, E.M. Application of absorbers with frequency-dependent attenuation in high-power wideband traveling-wave tubes. J. Commun. Technol. Electron. 60, 915–918 (2015). https://doi.org/10.1134/S106422691504004X
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DOI: https://doi.org/10.1134/S106422691504004X