Abstract
Numerical experiments are used to plan the development of diamond-based microwave FETs with an output power of 2.5 W per 1 mm of the gate width at a frequency of 15 GHz. A family of the I–V characteristics of the Schottky-barrier FET with gate length L G = 50 nm and width W = 1 mm is calculated. Bases on analogy with a TGF2023-20 GaN HEMT, the topology of the high-power diamond transistor (parallel cells with gate widths W = 1.2 mm and 24 elementary gates per cell) is constructed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
A. G. Vasil’ev, Yu. V. Kolkovskii, and Yu. A. Kontsevoi, Microwave Instruments and Devices on Wide-Bandgap Semiconductors (TEKhNOSFERA, Moscow, 2011), p. 186 [in Russian].
A. A. Altukhov, A. S. Bugaev, Yu. V. Gulyaev, et al., Uspekhi Sovr. Radioelektron., No. 6, 3 (2011).
H. Shiomi, Y. Nishibayashi, N. Toda, and S.-I. Shikata, IEEE Electron Device Lett. 16(1), 36 (1995).
A. M. Zubkov, G. Z. Garber, and V. D. Krasil’nikov, Elektron. Tekh., Ser. 2: Poluprovodn. Prib., No. 2, 18 (2009).
G. Z. Garber, J. Commun. Technol. Electron. 48, 114 (2003).
G. Z. Garber, J. Commun. Technol. Electron. 50, 822 (2005).
D. Moran, D. A. MacLaren, S. Porro, et al., Microelectron. Eng. 88, 2691 (2011).
Diamond: Electronic Properties and Applications, Ed. by L.S. Pan, and D.R. Kania (Kluwer, Dordrecht, 1995).
A. M. Zubkov, in Proc. 24th Eur. Microwave Conf., Cannes, France, Sep. 5–8, 1994 (IEEE, New York, 1994), p. 860.
www.triquimt.com/products/p/TGF2023-20 (90 Watt Descrete Power GaN on SiC HEMT).
A. A. Glybin, K. A. Ivanov, V. A. Kurmachev, and A. L. Filatov, Elektron. Tekh., Ser. 2: Poluprovodn. Prib., No. 1, 86 (2012).
www.triquimt.com/products/p/TGF2023-01 (6 Watt Descrete Power GaN on SiC HEMT).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © G.Z. Garber, A.A. Dorofeev, A.M. Zubkov, Yu.V. Kolkovskii, Yu.A. Kontsevoi, K.N. Zyablyuk, A.Yu. Mityagin, N.Kh. Talipov, G.V. Chucheva, 2014, published in Radiotekhnika i Elektronika, 2014, Vol. 59, No. 4, pp. 411–416.
Rights and permissions
About this article
Cite this article
Garber, G.Z., Dorofeev, A.A., Zubkov, A.M. et al. Problem of fabrication of diamond-based high-power microwave FETs. J. Commun. Technol. Electron. 59, 379–383 (2014). https://doi.org/10.1134/S106422691403005X
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S106422691403005X