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Equivalent actions of high-power microwave and video pulses with different polarities on semiconductor diode structures

  • Physical Processes in Electron Devices
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Abstract

The energy, power, and temperature characteristics of semiconductor p-n junction structure and the structure with a Schottky barrier are simulated under the actions of a high-power microwave and video pulses with different polarities. The results of simulations are presented. The temperature fields are comparatively analyzed using the numerical model of drift-diffusion thermal approximation and the interval estimates of the energy equivalence under the actions of pulses of different types.

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Correspondence to S. A. Mesheryakov.

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Original Russian Text © S.A. Mesheryakov, 2014, published in Radiotekhnika i Elektronika, 2014, Vol. 59, No. 2, pp. 184–194.

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Mesheryakov, S.A. Equivalent actions of high-power microwave and video pulses with different polarities on semiconductor diode structures. J. Commun. Technol. Electron. 59, 169–179 (2014). https://doi.org/10.1134/S1064226914010094

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  • DOI: https://doi.org/10.1134/S1064226914010094

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