Abstract
The energy, power, and temperature characteristics of semiconductor p-n junction structure and the structure with a Schottky barrier are simulated under the actions of a high-power microwave and video pulses with different polarities. The results of simulations are presented. The temperature fields are comparatively analyzed using the numerical model of drift-diffusion thermal approximation and the interval estimates of the energy equivalence under the actions of pulses of different types.
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Original Russian Text © S.A. Mesheryakov, 2014, published in Radiotekhnika i Elektronika, 2014, Vol. 59, No. 2, pp. 184–194.
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Mesheryakov, S.A. Equivalent actions of high-power microwave and video pulses with different polarities on semiconductor diode structures. J. Commun. Technol. Electron. 59, 169–179 (2014). https://doi.org/10.1134/S1064226914010094
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DOI: https://doi.org/10.1134/S1064226914010094