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Composition and microstructure of the luminescence-active area in the light-emitting SiO x N y (Si) nanocomposite layers

  • Nanoelectronics
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Abstract

Features of formation, the composition, and the mictostructure of the luminescence-active transition region arising in the course of the deposition of the SiO x N y (Si) nanocomposite layer with the use of the reactive ion sputtering of the Si target in the O2 and N2 atmosphere are studied. The composition and the microstructure of the transition regions are analyzed using the methods of the X-ray photoelectron spectroscopy (XPS) upon the layer-by-layer etching of the composite layers. it is found that the transition regions contain amorphous clusters and nanocrystals of Si as well as such nanoinclusions as Si-Si chains in the oxynitride matrix. The influence of the microstructure on the characteristics of the electroluminescence of nanocomposite layers is revealed.

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Authors
  1. V. G. Baru
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  2. V. I. Pokalyakin
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  3. E. A. Skryleva
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Additional information

Original Russian Text © V.G. Baru, V.I. Pokalyakin, E.A. Skryleva, 2011, published in Radiotekhnika i Elektronika, 2011, Vol. 56, No. 10, pp. 1237–1244.

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Baru, V.G., Pokalyakin, V.I. & Skryleva, E.A. Composition and microstructure of the luminescence-active area in the light-emitting SiO x N y (Si) nanocomposite layers. J. Commun. Technol. Electron. 56, 1227–1233 (2011). https://doi.org/10.1134/S1064226911100044

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  • DOI: https://doi.org/10.1134/S1064226911100044

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