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LM modes in semiconductor-dielectric plane-layered waveguide with dissipative and active layers

  • Radio Phenomena in Solids and Plasma
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Abstract

With the use of the iteration method and bilinear functional based on two-dimensional volume integral equation, LM modes existing in a plane-layered dielectric waveguide and quasi-LM modes existing in a multilayered rectangular dielectric waveguide are studied. The semiconductor layers are described as a homogeneous single-component dissipative plasma that can exhibit negative conductivity owing to external electric field. The results obtained for a homogeneous single-layer rectangular waveguide are compared to the results obtained with a model of a planar single-layer waveguide. Structures with passive and active semiconductor-plasma layers are investigated. It is shown that amplification is possible at frequencies above the cutoff frequency and that the dispersion laws below the cutoff are complicated.

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Authors
  1. E. Yu. Al’tshuler
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  2. M. V. Davidovich
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  3. Yu. V. Stefyuk
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Additional information

Original Russian Text © E.Yu. Al’tshuler, M.V. Davidovich, Yu.V. Stefyuk, 2010, published in Radiotekhnika i Electronika, 2010, Vol. 55, No. 1, pp. 105–112.

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Al’tshuler, E.Y., Davidovich, M.V. & Stefyuk, Y.V. LM modes in semiconductor-dielectric plane-layered waveguide with dissipative and active layers. J. Commun. Technol. Electron. 55, 98–105 (2010). https://doi.org/10.1134/S1064226910010134

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  • DOI: https://doi.org/10.1134/S1064226910010134

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