Abstract
The photorefractive effect that is nonlinear with respect to the pump power is studied. The physical phenomena responsible for such a nonlinearity are analyzed. The features of the transport electronic parameters of semiconductors are considered for the nonlinear photorefractive effect.
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Original Russian Text © A.L. Filatov, A.V. Lugovskoi, 2009, published in Radiotekhnika i Elektronika, 2009, Vol. 54, No. 5, pp. 611–616.
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Filatov, A.L., Lugovskoi, A.V. A method for considering the nonlinearity of the photorefractive effect with respect to the pump power in the analysis of electronic and thermal parameters of silicon structures. J. Commun. Technol. Electron. 54, 583–587 (2009). https://doi.org/10.1134/S106422690905012X
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DOI: https://doi.org/10.1134/S106422690905012X