Abstract
Electron-beam lithography and ion etching of GaAs/AlGaAs heterostructures are used to create transistor structures with a qusi-1D ballistic channel and side control gates. A plateau of the conductance quantization is observed up to unusually high temperatures (up to 50 K) along with the hysteresis effect. It is demonstrated that such features are related to the presence of a narrow strip of positive charge in the doped layer in AlGaAs, this strip being the result of the etching in the vicinity of the channel.
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Original Russian Text © V.I. Borisov, V.G. Lapin, A.G. Temiryazev, A.I. Toropov, A.I. Chmil’, 2009, published in Radiotekhnika i Elektronika, 2009, Vol. 54, No. 4, pp. 488–492.
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Borisov, V.I., Lapin, V.G., Temiryazev, A.G. et al. Features of the conductance quantization for etched 1D channels. J. Commun. Technol. Electron. 54, 468–472 (2009). https://doi.org/10.1134/S1064226909040123
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DOI: https://doi.org/10.1134/S1064226909040123