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Analysis of the dynamics of the local microbreakdown in silicon avalanche photodiode structures

  • Physical Processes in Electron Devices
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Abstract

The methods of mathematical simulation are used to study the dynamics of the local microbreak-down in silicon avalanche photodiode structures. The model takes into account the locality of the region of the avalanche multiplication and the delay of the spreading of the avalanche current over the area of the back electrode of the diode. The calculations yield two transient phases of the voltage build-up across the diode: fast (due to the current spreading) and slow (related to the conventional RC recharging). The load resistances needed for the pulsed operation of the avalanche photodiodes are calculated for a series of practically important diode capacitances and spreading resistances of the back electrode.

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References

  1. A. Spinelli and A. L. Lacaita, IEEE Trans. Electron. Devices 44, 1931 (1997).

    Article  Google Scholar 

  2. R. J. McIntyre, IEEE Trans. Electron. Devices 46, 1623 (1999).

    Article  Google Scholar 

  3. C. Groves, C. H. Tan, J. P. R. David, et al., IEEE Trans. Electron. Devices 52, 1527 (2005).

    Article  Google Scholar 

  4. S. Barber, Electron. Eng., No. 63, 1037 (1984).

  5. M. Ghioni, S. Cova, A. Lacaita, and G. Ripamonti, Electron. Lett. 24, 1476 (1988).

    Article  Google Scholar 

  6. N. G. Woodard, E. G. Hufstedler, and G. P. Latyatis, Appl. Phys. Lett. 64, 1177 (1994).

    Article  Google Scholar 

  7. D. Stoppa, L. Pancheri, M. Scandiuzzo, et al., in Proc. 31st Europ. Sol. St. Circuits Conf. (ESSCIRC), Grenoble, France, Sept. 12–16, 2005 (IEEE, New York), p. 487.

  8. C. Niclass, A. Rochas, P.-A. Besse, and E. Charbon, IEEE. J. Sol. St. Circuits 40, 1847 (2005).

    Article  Google Scholar 

  9. I. V. Vanyushin, V. A. Gergel’, V. M. Gontar’, et al., Fiz. Tekh. Poluprovodn. (S.-Peterburg) 41, 741 (2007) [Semiconductors 41, 718 (2007)].

    Google Scholar 

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Authors
  1. A. V. Verkhovtseva
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  2. V. A. Gergel’
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  3. A. P. Zelenyi
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  4. V. A. Zimoglyad
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  5. Yu. I. Tishin
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Additional information

Original Russian Text © A.V. Verkhovtseva, V.A. Gergel’, A.P. Zelenyi, V.A. Zimoglyad, Yu.I. Tishin, 2009, published in Radiotekhnika i Elektronika, 2009, Vol. 54, No. 3, pp. 371–376.

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Verkhovtseva, A.V., Gergel’, V.A., Zelenyi, A.P. et al. Analysis of the dynamics of the local microbreakdown in silicon avalanche photodiode structures. J. Commun. Technol. Electron. 54, 355–359 (2009). https://doi.org/10.1134/S1064226909030152

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  • DOI: https://doi.org/10.1134/S1064226909030152

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