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Simulating jumps of the output power of a quasi-active microwave limiter based on p-i-n diodes

  • Physical Processes in Electron Devices
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Abstract

A program for time-domain simulation of a GaAs integrated power limiter based on two p-i-n diodes is developed. The system is simulated via numerical solution the problem with the initial conditions for a nonlinear system of equations that describes the electric circuit of the limiter. For a limiter with a 1.8 μm-thick i-layer and a frequency of 9.4 GHz, the dependence of the amplitude of the fundamental harmonic of the current passing through the diode on the amplitude of the fundamental harmonic of the voltage across this diode is shown to be S-shaped. This shape of the dependence for the detecting diode is the cause of jumps of the output power. Results of the simulation of a limiter with a 1.2-μm-thick i-layer for the frequencies 3.0, 9.4, and 25.0 GHz are presented. At the frequency 25 GHz, the amplitude modulation of the output signal is observed.

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Authors
  1. G. Z. Garber
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Additional information

Original Russian Text © G.Z. Garber, 2007, published in Radiotekhnika i Elektronika, 2007, Vol. 52, No. 12 pp. 1518–1523.

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Garber, G.Z. Simulating jumps of the output power of a quasi-active microwave limiter based on p-i-n diodes. J. Commun. Technol. Electron. 52, 1409–1414 (2007). https://doi.org/10.1134/S1064226907120145

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  • DOI: https://doi.org/10.1134/S1064226907120145

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