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Mathematical and general-circuit simulation of a chaos generator based on a field-effect transistor

  • Dynamic Chaos in Radiophysics and Electronics
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Abstract

A model of a chaos generator with a field-effect transistor as an active element is proposed. The generator is a variant of a Colpitts oscillator. A mathematical model described by three ordinary differential equations and a circuitry model taking into account the internal structure of the transistor and temperature and frequency effects are studied. Bifurcation phenomena, including transitions to chaos, are analyzed. Scaling relations that make it possible to scale the frequency band of chaotic generation and to use transistors with different steepnesses of the current-voltage characteristic are derived.

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Authors
  1. E. V. Grigor’ev
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  2. A. S. Dmitriev
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  3. E. V. Efremova
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  4. L. V. Kuz’min
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Additional information

Original Russian Text © E.V. Grigor’ev, A.S. Dmitriev, E.V. Efremova, L.V. Kuz’min, 2007, published in Radiotekhnika i Elektronika, 2007, Vol. 52, No. 12 pp. 1463–1471.

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Grigor’ev, E.V., Dmitriev, A.S., Efremova, E.V. et al. Mathematical and general-circuit simulation of a chaos generator based on a field-effect transistor. J. Commun. Technol. Electron. 52, 1355–1362 (2007). https://doi.org/10.1134/S106422690712008X

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  • DOI: https://doi.org/10.1134/S106422690712008X

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