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Analysis of the parameters of deep centers in the Al/i-GaAs detectors of charged particles and X-ray radiation

  • Physical Processes in Electron Devices
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Abstract

The parameters of deep centers in the barrier structures based on intrinsic gallium arsenide that are used in the detectors of charged particles and X-ray radiation are studied via the methods of the deep-level transient spectroscopy (DLTS) and the low-frequency-noise spectroscopy. Two deep levels (DLs) with different layer concentrations are revealed in the samples under study. It is demonstrated that a high-temperature DL with relatively high ionization energy determines the spectral power density of the excess noise and reverse currents of an Al/i-GaAs detector. In addition, it is demonstrated that the DL ionization energies determined with the use of the DLTS and the low-frequency-noise spectroscopy methods are identical.

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Authors
  1. G. P. Zhigal’skii
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  2. S. A. Kostryukov
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  3. V. G. Litvinov
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  4. M. S. Rodin
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  5. T. A. Kholomina
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Additional information

Original Russian Text © G.P. Zhigal’skii, S.A. Kostryukov, V.G. Litvinov, M.S. Rodin, T.A. Kholomina, 2007, published in Radiotekhnika i Elektronika, 2007, Vol. 52, No. 10, pp. 1260–1265.

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Zhigal’skii, G.P., Kostryukov, S.A., Litvinov, V.G. et al. Analysis of the parameters of deep centers in the Al/i-GaAs detectors of charged particles and X-ray radiation. J. Commun. Technol. Electron. 52, 1165–1170 (2007). https://doi.org/10.1134/S1064226907100142

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  • DOI: https://doi.org/10.1134/S1064226907100142

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